Determination of Shockley‐Read recombination center parameters in MBE p‐Hg_1‐xCd_xTe/GaAs via photoconductivity in magnetic field

Abstract

A new method for determination of parameters of recombination centres is developed. This method is based on measurements of steady‐state photoconductivity in magnetic field for Faradey's geometry (magnetophotoconductivity). The method was used for investigation of the parameters of recombination centres into MBE p‐HgCdTe with x=0.22. It was obtained, that the energy of recombination centres is lies near to midgap. The ratio between electrons and holes capture coefficients exceeds earlier published data by an order of magnitude. The concentration of recombination centres does not depends on hole concentration in range (4÷8)×1021 m‐3. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

The Influence of Dopant and Substrate Temperature on the Current-Volltage Characteristics for CdTe/P-GaAs Heterojunction

“…Its band gap about 1.5eV, just in the middle of the solar spectrum, and possess high absorption coefficient (α) (>10 4 cm -1 ) for the visible solar spectrum make CdTe very good candidate material for photovoltaic conversion [7]. Moreover CdTe has attracted much attention for producing X-ray and gamma-ray detectors operating at room temperature [8,9], as well as a buffer layer for the growth of Hg 1-x Cd x Te or Hg 1-x (Cd y Zn 1-y ) x Te for infrared detectors [10][11][12] and it is a promising host material as doping with magnetic impurities such as Co, Fe, Mn for magneto-optic devices [13][14][15].…”