Determination of existing stress in silicon films on sapphire substrate using Raman spectroscopy

Englert, Th.; Abstreiter, G.; Pontcharra, J. de

doi:10.1016/0038-1101(80)90164-1

Cited by 224 publications

(54 citation statements)

References 9 publications

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“…Previous work on Raman studies of shocked materials has been carried out by several authors. Englert et al (1980) detected a shift to higher wavelength in the position of the Raman line under compressive forces. Heymann & Cellucci (1988) specifically compared the Raman spectra of chondritic laboratory-impacted olivines and non-impacted olivines.…”

Section: (A) Shock Grade Of the Samplesmentioning

confidence: 94%

“…Such deformations can be studied with Raman spectroscopy. Several authors have used this technique to evaluate crystal deformation in highly shocked meteorites (Englert et al 1980;Heymann & Cellucci 1988;Heymann 1990;Chen & Xie 1992;Miyamoto & Ohsumi 1995;Hezel et al 2008;Weselucha-Birczynska & Zmudzka 2008; among others), but no specific Raman studies have been performed on minerals from weak-to-moderately shocked chondrites to our knowledge.…”

Section: Introductionmentioning

confidence: 99%

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Raman spectroscopic study of four Spanish shocked ordinary chondrites: Cañellas, Olmedilla de Alarcón, Reliegos and Olivenza

Rull

Muñoz-Espadas

Hernández

et al. 2010

Phil. Trans. R. Soc. A.

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Shock metamorphism in chondritic parent bodies produces typical textures, visible under the microscope, which are a consequence of structural deformation of the crystals. Such deformations can be studied with Raman spectroscopy. The vibrational characteristics of olivines and pyroxenes, structurally deformed by weak-to-moderate shock metamorphism, have been determined on four Spanish ordinary chondrites (Cañellas, Olmedilla de Alarcón, Reliegos and Olivenza). Such deformations would affect, in principle, the band positions and widths of the Raman spectra peaks. The measured band positions and relative intensities are consistent with chemical composition for olivines and pyroxenes, but show little influence on the degree of shock. However, the full spectral band width of the silicate internal modes shows some dependence on the impact grade, which could be attributed to inhomogeneous effects produced by the impacts.

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Section: (A) Shock Grade Of the Samplesmentioning

confidence: 94%

Section: Introductionmentioning

confidence: 99%

Raman spectroscopic study of four Spanish shocked ordinary chondrites: Cañellas, Olmedilla de Alarcón, Reliegos and Olivenza

Rull

Muñoz-Espadas

Hernández

et al. 2010

Phil. Trans. R. Soc. A.

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“…The phenomenon of Raman scattering, and the effects of mechanical stress on the Raman spectrum of single-crystal silicon, have been extensively studied and documented [106]. Englert et al used Raman spectroscopy to characterize the stress state of polysilicon films deposited on sapphire substrate [107]. In 1980's, the Mitsubishi group showed that micro-Raman spectroscopy could be used to measure mechanical stress in the Si near LOCOS structures with a spatial resolution of about 1 µm [108], [109].…”

Section: Raman Spectroscopymentioning

confidence: 99%

Techniques in Residual Stress Measurement for MEMS and Their Applications

Chen

Mems/Nems

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This chapter mainly focuses on the introduction of residual stress characterization of MEMS materials. The origin and classification of residual stress appearing in thin films and MEMS structures are firstly introduced and the essential background of necessary mechanics, which is utilized to convert the measured data into the final residual stress, is followed. Various types of residual stress characterization techniques conducted in MEMS scale are subsequently addressed and reviewed. Finally, a brief discuss on controlling residual stresses and on taking the advantage of residual stress in MEMS applications is briefly discussed.

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“…4. For simplicity, we only compared Raman peak shift rather than strain, otherwise we may have needed to use different strain-shift coefficients for the samples because they might have had bi-axial strain in unpatterned samples and uni-axial strain in those that were patterned [30][31][32][33][34][35][36][37]. The Raman peak shift for the patterned SiN samples was defined as the largest value with quasi-line-source excitation across the line pattern.…”

Section: Evaluation Of Model-device Structuresmentioning

confidence: 99%