2007
DOI: 10.1016/j.jpcs.2007.01.023
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Determination of electrical and solar cell parameters of FTO/CuPc/Al Schottky devices

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Cited by 20 publications
(3 citation statements)
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“…The low efficiency is attributed the strong effect of series resistance of the structure and the low FF value. The electrical and solar cell parameters of a Schottky structure fabricated using CuPc and fluorinated tin oxide were investigated and FF, V OC and I SC values were found as 0.18, 0.44 V and 2.2 mA m −2 , respectively, under 98 mW cm −2 illumination . Yakuphanoglu et al .…”
Section: Resultsmentioning
confidence: 99%
“…The low efficiency is attributed the strong effect of series resistance of the structure and the low FF value. The electrical and solar cell parameters of a Schottky structure fabricated using CuPc and fluorinated tin oxide were investigated and FF, V OC and I SC values were found as 0.18, 0.44 V and 2.2 mA m −2 , respectively, under 98 mW cm −2 illumination . Yakuphanoglu et al .…”
Section: Resultsmentioning
confidence: 99%
“…Organic semiconductor materials come into prominence with their production and deposition simplicity; potential in electrical features, using flexible substrates, lightweight and wide range of applications [2]. Copper phthalocyanine (CuPc) is a hole transport (p-type) organic semiconductor material, which promises high thermal and chemical stability, is quite easily deposited as thin film with high sensitivity, and exhibits high optical density and photoconductivity [3][4][5][6]. CuPc thin films can be deposited by various techniques such as vacuum sublimation [7], thermal evaporation [2,3], and chemical spray deposition (CSP) technique [8].…”
Section: Introductionmentioning
confidence: 99%
“…where 𝐴 is the active area of the organic diode (𝐴 = 0.12 cm 2 ), 𝑑 is the thickness of CuPc film (𝑑 = 40 nm), and according to the previous report for CuPc [19] we assume the dielectric constant of CuPc, i.e. 𝜀 CuPc = 4.5×10 −11 F/m.…”
mentioning
confidence: 99%