Determination of diamond [100] and [111] growth rate and formation of highly oriented diamond film by microwave plasma-assisted chemical vapor deposition

Abstract

A novel method was proposed for measuring the epitaxial growth rate of diamond by microwave plasma-assisted chemical vapor deposition (MPCVD). Cubo-octahedral crystals were formed on an Si(100) wafer and were used as the substrate in the homoepitaxial growth. Growth rates of the {100} and {111} were simultaneously measured from the change in the top view size of crystals. Thus, the relative growth rate of {100} to {111} was obtained without any limitation of its value. The homoepitaxial growth rate was strongly affected by the type of diamond faces, CH4 concentration in the gas phase, and deposition temperature. The growth rate of {100} was more dependent on CH4 concentration than that of {111}, while the activation energy for the [100] growth was about half that for the [111] growth. These tendencies were in accord with growth mechanisms proposed for each diamond plane. Reaction conditions were optimized based on the relative growth rate of (100) to (111) planes, and a highly oriented (100) diamond film with a quite smooth surface was formed on an Si(100) wafer.

Molecular Dynamics Simulations of the Sticking and Etch Behavior of Various Growth Species of (Ultra)Nanocrystalline Diamond Films

“…Therefore, the experimental ratio of the diamond (111) and (100) growth has to increase at higher temperatures. An increase of the ratio of diamond (111) and (100) growth when the substrate temperature is raised from 800 K to 1100 K, is in agreement with earlier experimental measurements by Maeda et al [32] …”

“…These results have implications on the effect of the temperature on the experimental ratio of diamond (100) and (111) growth, which are indeed confirmed by earlier experimental investigations. [32] Finally, our calculations predict that C 2 is the only significant etching species at hydrogenated diamond surfaces. The etching coefficient increases at higher substrate temperature.…”

Microtexture and Grain Boundaries in Freestanding CVD Diamond Films: Growth and Twinning Mechanisms

“…In either case, the deposition velocity is proportional to the methane concentration and to the substrate temperature. [34] Based on the decomposition sequence of methane, the bonding of CH 2 ÀCH 2 occurs before that of CH 3 ÀCH 1 , which leads to a kinetic advantage of deposition on {001} planes over that on {111} planes. Another theoretical reason for preferential growth of diamond on {001} facets rather than on {111} facets is the fact that {001} planes were reported to have a lower probability for defect incorporation and twin formation than the {111} facets.…”

Homoepitaxial growth and hydrogen incorporation on the chemical vapor deposited (111) diamond

“…This observation is in good agreement with a previous report. 25 The decrease of growth rate with increasing temperature over 850°C is suggested to be due to the decrease in sticking probability of carboncontaining radical species on the diamond surface. In our experiments, when the incident microwave power and pressure were maintained at constant levels, the discharge plasma conditions remained constant as well.…”

“…Several studies have been carried out on the growth rate of diamond. 2,25,26 Generally, the growth rate ͑G͒ of the film can be described as…”