Determination of correlation coefficient of the statistical and formative time delay in nitrogen

Gocić, S. R.; Marković, Vera; Stamenković, S. N.

doi:10.1088/0022-3727/42/21/212001

Cited by 8 publications

(4 citation statements)

References 20 publications

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“…The formation time delays t f are both ∼90 µs, and the large difference between the two distributions results from the quite high t s of ∼300 µs at h = 300 µm while quite low t s of ∼90 µs at h = 2000 µm. Here, σ td is close to t s (in region III of memory curve) [35]. The calculated cumulative probability of the t d distribution is 0 at t d < 90 µs, and then increases to 100% after a large range of t d .…”

Section: Probability Distribution Features Of Breakdown In Rfp and Srpmentioning

confidence: 57%

“…As discussed by many researchers [e.g. 34,35], in region I, below τ = 1 ms, the standard deviation of t d is nearly equal to that of the t f (σ td ≈ σ tf ), and σ ts can be neglected. Here, t d is characterized by Gaussian distribution [35].…”

Section: Memory Curves In Srpmentioning

confidence: 95%

“…34,35], in region I, below τ = 1 ms, the standard deviation of t d is nearly equal to that of the t f (σ td ≈ σ tf ), and σ ts can be neglected. Here, t d is characterized by Gaussian distribution [35]. In region II, the contributions of σ tf and σ ts to σ td are at comparable levels.…”

Section: Memory Curves In Srpmentioning

confidence: 99%

“…In region III, σ ts has the dominant time delay level (σ td ≈ σ ts ). Here, the t d will be characterized by exponential distribution [35].…”

Section: Memory Curves In Srpmentioning

confidence: 99%

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Characteristics of electric breakdown in repeated frequency pulse with microcavity effect

Zhang,

Wang,

2024

J. Phys. D: Appl. Phys.

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The electric breakdown characteristics in microcavity structure under repeated frequency pulse (RFP) were studied, and the physical mechanism was investigated quantitatively based on the full statistical distribution of breakdown time delay obtained in step rectangular pulse (SRP). Experimentally, microcavity heights of 300, 800, and 2000 μm were used. In RFP, the occurrence of breakdown becomes probabilistic when the time delay td and pulse width tPW satisfy the condition ts-min<tPW<ts-max. The breakdown probability increases with pulse width, and the probability distributions are roughly exponential and Gaussian at pulse frequencies of 3 and 1000 Hz, respectively. We found the results are attributed to the similar distributions of time delay in RFP and SRP with similar afterglow time and pulse voltage, and the equal distributions of breakdown probability (with pulse width) and cumulative probability of td in RFP. The microcavity effect will decrease the breakdown probability under given pulse width and voltage. Additionally, it is found that in RFP the increase of pulse width from 1 to 1000 μs will decrease the threshold voltages at 0% and 100% breakdown probabilities, and the threshold voltage difference will decrease simultaneously to around 0, which results in the transition of breakdown feature from probability to certainty. This phenomenon is due to that the reduction of pulse voltage will increase the time delay significantly and meanwhile the variation rate of time delay with pulse voltage Δtd/ΔUw decreases sharply. The microcavity effect will cause the increase of threshold breakdown voltages at a given pulse width and frequency. Finally, it is found that in RFP the breakdown voltage will decrease with the rise of pulse frequency from 100 to 104 Hz, which is consistent with the variation of time delay with afterglow time (from 10-1 to 103 ms) in the memory curve measured in SRP under similar afterglow time. Overall, the microcavity effect will enhance the adsorption of charged and excited species by dielectric walls during afterglow period and enlarge the time delay in the following pulse breakdown, and then influence the RFP breakdown characteristics.

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Section: Probability Distribution Features Of Breakdown In Rfp and Srpmentioning

confidence: 57%

Section: Memory Curves In Srpmentioning

confidence: 95%

Section: Memory Curves In Srpmentioning

confidence: 99%

“…In region III, σ ts has the dominant time delay level (σ td ≈ σ ts ). Here, the t d will be characterized by exponential distribution [35].…”

Section: Memory Curves In Srpmentioning

confidence: 99%

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Characteristics of electric breakdown in repeated frequency pulse with microcavity effect

Zhang,

Wang,

2024

J. Phys. D: Appl. Phys.

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Influence of different cathode surfaces on the breakdown time delay in neon DC glow discharge

Stamenković¹,

Marković²,

Gocić³

et al. 2013

Vacuum

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Electrical breakdown in nitrogen at low pressure – physical processes and statistics

Gocić

2010

J. Phys.: Conf. Ser.

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The results of investigation of the electrical breakdown in nitrogen, obtained in combined approach based on measuring of the current-voltage characteristic, modeling of basic physical processes and statistical analysis of the breakdown time delay are presented in this report. Measurement of the current-voltage characteristics with additional monitoring of spatial and temporal distribution of the emission from discharge provides information concerned on development of different regime of low-pressure gas discharge and on processes of the electrical breakdown and discharge maintenance. The presented model of the gas discharge includes the kinetics of mains constituents of the nitrogen plasma, charged particles, vibrationally manifold of molecular ground state, molecular singlet and triplet states and nitrogen atoms. The model is applied in case of a homogenous electric field, at electric field to gas density ratio E/N of 1000 Td (1Td = 10-17 Vcm 2). The obtained results show that the main mechanism of a nitrogen atoms production in this case is the molecular dissociation in a direct electron impact, while influence of highly excited vibrationall states can be neglected. Also, two new distributions of the statistical time delay of electrical breakdown in nitrogen, the Gaussian and Gauss-exponential ones, are presented. Distributions are theoretically founded on binomial distribution for the occurrence of initiating electrons and described by using analytical and numerical models. Moreover, the correlation coefficient between the statistical and formative time delay of electrical breakdown in nitrogen is determined. Starting from bivariate normal (Gaussian) distribution of two random variables, the analytical distribution of the electrical breakdown time delay is theoretically founded on correlation of the dependent statistical and formative time delay. Gaussian density distribution of the electrical breakdown time delay goes to Gaussian of the formative time or to Gaussian of the statistical time delay depending on electron yields, while the correlation coefficient is determined in the transition region from the formative time to statistical time dominated statistics .

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Determination of correlation coefficient of the statistical and formative time delay in nitrogen

Cited by 8 publications

References 20 publications

Characteristics of electric breakdown in repeated frequency pulse with microcavity effect

Characteristics of electric breakdown in repeated frequency pulse with microcavity effect

Influence of different cathode surfaces on the breakdown time delay in neon DC glow discharge

Electrical breakdown in nitrogen at low pressure – physical processes and statistics

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