Two new distributions of the statistical time delay of electrical breakdown in nitrogen are reported in this paper. The Gaussian and Gauss-exponential distributions of statistical time delay have been obtained on the basis of thousands of time delay measurements on a gas tube with a plane-parallel electrode system. Distributions of the statistical time delay are theoretically founded on binomial distribution for the occurrence of initiating electrons and described by using simple analytical and numerical models. The shapes of distributions depend on the electron yields in the interelectrode space originating from residual states. It is shown that a distribution of the statistical time delay changes from exponential and Gauss-exponential to Gaussian distribution due to the influence of residual ionization.

The memory effect, the phenomenon that some active species survive very long afterglow periods and affect subsequent breakdown, was observed more than 40 years ago. The effects have been observed even over periods of several hours. Attempts to explain the memory effect in nitrogen were mostly based on hypothetical metastables and on the A3Σ state. However, such explanations had to neglect some quenching processes which are known to be very effective under the conditions of the experiments. The explanation based on atoms remaining from the previous discharge and recombining on the cathode to produce initial electrons was shown to be fully consistent with all the experimental data for nitrogen including a wide range of pressures and the addition of oxygen impurities. The memory effect was also shown to be sensitive to the work function of the cathode material. Thus, an attempt was made to use the memory effect as a diagnostic tool to establish the data on the dominant loss of nitrogen atoms from the discharge which is recombination on the walls of the tube. However, a possible role of higher vibrational levels has not been fully addressed, mainly due to the shortage of data. On the other hand, the memory effect which was observed for rare gases cannot be explained on the basis of the standard data unless the presence of molecular impurities is invoked. Another open issue would be the role of charges accumulated on the glass surfaces and whether those may be released to the gas phase. The aim of this paper is to summarize the achievements of the model based on atom recombination and to point out how the breakdown model associated with the memory effect may be completed and how it may be applied in practical discharges.

In this paper the afterglow kinetics in argon is studied by the breakdown time delay measurements as a function of relaxation time t¯d(τ) (“memory curve”). Measurements were carried out at the pressure of 1.33mbar in a gas tube with gold-plated copper cathode and approximate and exact numerical models are developed to follow metastable and charged particle decay. It was found that the early afterglow kinetics is governed by the charged particle decay up to hundreds of milliseconds, extending from ambipolar to the free diffusion limit. Quenching processes reduce the effective lifetime of metastable states several orders of magnitude below that relevant for the time scale of the observations if realistic abundances and processes are included in the model. Nitrogen atoms originating from impurities and recombining on the cathode surface can determine the breakdown time delay down to that defined by the level of cosmic rays and natural radioactivity.

In this paper the fluctuations and correlations of the formative t f and statistical time delay t s in neon studied by electrical breakdown time delay measurements are presented. The Gaussian distribution for the formative time delay, as well as Gaussian, Gauss-exponential and exponential distribution for the statistical time delay were obtained experimentally. By fitting their dependencies on the afterglow period by simple analytical models, the correlations of the formative and statistical time delay were found. Linear correlation coefficient is ρ ≈ 1 at high electron yields and ρ ≈ 0 at low electron yields. Thus, the formative and statistical time delay are correlated at high electron yields during charged particle decay and therefore not independent.

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