Determination of band line-up in β-SiC/Si heterojunction for Si-HBT's

Aoyama, Takayuki; Sugii, T.; Ito, Takashi

doi:10.1016/0169-4332(89)90126-8

Cited by 23 publications

(10 citation statements)

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“…As can be observed, two main peaks corresponding to bulk silicon (BE = 99.5 eV) and to the SiO 2 native oxidation layer (BE = 103.2 eV) contribute to the spectral weight. On the basis of the binding energies alone, the central peak could be ascribed both to the silicon carbide SiC (with a BEs reported in the range from 99.85 eV 29 to 100.8 eV 30 ) and to the nonstoichiometric silicon oxide SiO x (BE from 100.4 to 103.23 eV). 20 We exclude silicon carbide as the origin of the middle peak, as we did not observe its counterpart in the C 1s spectral region.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Direct Evidence of Chemically Inhomogeneous, Nanostructured, Si–O Buried Interfaces and Their Effect on the Efficiency of Carbon Nanotube/Si Photovoltaic Heterojunctions

et al. 2013

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An angle resolved X-ray photoemission study of carbon nanotube/ silicon hybrid photovoltaic (PV) cells is reported, providing a direct probe of a chemically inhomogeneous, Si−O buried interface between the carbon nanotube (CNT) networked layer and the n-type Si substrate. By changing the photoelectron takeoff angle of the analyzer, a nondestructive in-depth profiling of a CNT/SiO x / SiO 2 /Si complex interface is achieved. Data are interpreted on the basis of an extensive modeling of the photoemission process from layered structures, which fully accounts for the depth distribution function of the photoemitted electrons. As X-ray photoemission spectroscopy provides direct access to the buried interface, the aging and the effects of chemical etching on the buried interface have been highlighted. This allowed us to show how the thickness and the composition of the buried interface can be related to the efficiency of the PV cell. The results clearly indicate that while SiO 2 is related to an increase of the efficiency, acting as a buffer layer, SiO x is detrimental to cell performances, though it can be selectively removed by etching in HF vapors.

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Section: ■ Results and Discussionmentioning

confidence: 99%

Direct Evidence of Chemically Inhomogeneous, Nanostructured, Si–O Buried Interfaces and Their Effect on the Efficiency of Carbon Nanotube/Si Photovoltaic Heterojunctions

et al. 2013

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“…Candidate materials for changing Δ E C are hydrogenated nanocrystalline cubic silicon carbide (nc‐Si3C‐SiC:H) and zinc magnesium oxide (Zn 1 −x Mg x O). For nc‐3C‐SiC:H, the Δ E C is about 0.45 eV (electron affinity: 3.5 eV ). The Δ E C for Zn 1− x Mg x O can be changed from −0.4 to 0.22 eV by changing Mg content (electron affinity: from 3.73 to 4.35 eV ).…”

Section: Optimization Of the Structure Of Perovskite/hj C‐si Monolithmentioning

confidence: 99%

Device simulation of CH₃NH₃PbI₃ perovskite/heterojunction crystalline silicon monolithic tandem solar cells using an n‐type a‐Si:H/p‐type µc‐Si_1–xO_x:H tunnel junction

Nakanishi

Takiguchi

Miyajima

2016

Physica Status Solidi (a)

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We investigate perovskite/heterojunction crystalline silicon monolithic tandem solar cells by using device simulation. A hydrogenated amorphous and microcrystalline silicon‐based tunnel recombination junction is applied to the tandem solar cells. The influence of the conduction and valence band offset between the n‐type layer of the perovskite top cell and the tunnel recombination junction was investigated. To obtain excellent solar cell performance, the conduction band offset should be 0–0.6 eV, although the valence band offset does not affect the solar cell performance. We also found that higher fill factor is expected when the n‐type layer of the perovskite top cell is located on the tunnel recombination junction compared with the structure in which the hole conductor is located on the tunnel recombination junction.

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“…The images were acquired separating two chemical species of carbon in C 1s peak: (i) graphite at BE = 284.6 eV and (ii) carbide at BE = 283 eV. The Si 2p signal was characterized by a peak centred at BE = 99.9 eV, that is typical of SiC, [6] and the Si 2p chemical image (not shown) coincided with the carbide image. As shown in the figure, the outer and inner borders of SiC ring confine with graphite.…”

Section: Resultsmentioning

confidence: 99%

Composite of Ti6Al4V and SiC fibres: evolution of fibre–matrix interface during heat treatments

Donnini

Kačiulis

Mezzi

et al. 2008

Surface & Interface Analysis

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The changes in fibre-matrix interface during the heat treatment of Ti6Al4V matrix reinforced with carbon-coated SiC fibres, have been studied using XPS, AES and SEM/EDS (energy dispersion spectroscopy) techniques. The samples were characterized before and after heating at different temperatures up to 600• C with long exposure times up to 1000 h. Particular attention was paid to the C/matrix interface, where high temperature treatment could lead to the formation of titanium carbide. Due to the experimental difficulties to separate the contributions of TiC and SiC, the interaction between titanium and carbon was simulated by heating Ti6Al4V and pure Ti foils covered with graphite. Obtained interfaces have been analysed by XPS depth profiling. Experimental results were supported by theoretical calculations of carbon diffusion.

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Determination of band line-up in β-SiC/Si heterojunction for Si-HBT's

Cited by 23 publications

References 5 publications

Direct Evidence of Chemically Inhomogeneous, Nanostructured, Si–O Buried Interfaces and Their Effect on the Efficiency of Carbon Nanotube/Si Photovoltaic Heterojunctions

Direct Evidence of Chemically Inhomogeneous, Nanostructured, Si–O Buried Interfaces and Their Effect on the Efficiency of Carbon Nanotube/Si Photovoltaic Heterojunctions

Device simulation of CH₃NH₃PbI₃ perovskite/heterojunction crystalline silicon monolithic tandem solar cells using an n‐type a‐Si:H/p‐type µc‐Si_1–xO_x:H tunnel junction

Composite of Ti6Al4V and SiC fibres: evolution of fibre–matrix interface during heat treatments

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Determination of band line-up in β-SiC/Si heterojunction for Si-HBT's

Cited by 23 publications

References 5 publications

Direct Evidence of Chemically Inhomogeneous, Nanostructured, Si–O Buried Interfaces and Their Effect on the Efficiency of Carbon Nanotube/Si Photovoltaic Heterojunctions

Direct Evidence of Chemically Inhomogeneous, Nanostructured, Si–O Buried Interfaces and Their Effect on the Efficiency of Carbon Nanotube/Si Photovoltaic Heterojunctions

Device simulation of CH3NH3PbI3 perovskite/heterojunction crystalline silicon monolithic tandem solar cells using an n‐type a‐Si:H/p‐type µc‐Si1–xOx:H tunnel junction

Composite of Ti6Al4V and SiC fibres: evolution of fibre–matrix interface during heat treatments

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Device simulation of CH₃NH₃PbI₃ perovskite/heterojunction crystalline silicon monolithic tandem solar cells using an n‐type a‐Si:H/p‐type µc‐Si_1–xO_x:H tunnel junction