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A set of LaAlO3/SrT iO3 (LAO-STO) interfaces has been probed by x-ray photoemission spectroscopy in order to contrast and compare the effects of LAO overlayer thickness and of the growth conditions on the electronic properties of these heterostructures. These effects are tracked by considering the band-offset and the density of Ti +3 states, respectively. It is shown that the dominant effects on the local electronic properties are determined by the O2 partial pressure during the growth. In particular, a low P(O2) yields Ti +3 states with higher density and lower binding energy as compared to the sample grown at high P(O2) or to the bare STO reference sample. Band offset effects are all below about 0.7 eV, but a careful analysis of Ti 2p and Sr 3d peaks shows that valence band offsets can be at the origin of the observed peak width. In particular, the largest offset is shown by the conducting sample, that displays the largest Ti 2p and Sr 3d peak widths.

An angle resolved X-ray photoemission study of carbon nanotube/ silicon hybrid photovoltaic (PV) cells is reported, providing a direct probe of a chemically inhomogeneous, Si−O buried interface between the carbon nanotube (CNT) networked layer and the n-type Si substrate. By changing the photoelectron takeoff angle of the analyzer, a nondestructive in-depth profiling of a CNT/SiO x / SiO 2 /Si complex interface is achieved. Data are interpreted on the basis of an extensive modeling of the photoemission process from layered structures, which fully accounts for the depth distribution function of the photoemitted electrons. As X-ray photoemission spectroscopy provides direct access to the buried interface, the aging and the effects of chemical etching on the buried interface have been highlighted. This allowed us to show how the thickness and the composition of the buried interface can be related to the efficiency of the PV cell. The results clearly indicate that while SiO 2 is related to an increase of the efficiency, acting as a buffer layer, SiO x is detrimental to cell performances, though it can be selectively removed by etching in HF vapors.

An engineered multilayer structure of platinum-cadmium stannate-titanium oxide (Pt-CTO-TO), with different TO layer thickness (in the range 1-5 nm), has been grown at 400 °C on glass substrates by RF magnetron sputtering, following a 2-step procedure without breaking vacuum. To produce an alternative and reliable front contact for dye sensitized solar cells (DSCs), morphology and composition of a TO blocking layer have been studied, paying particular attention to the oxide-oxide (CTO-TO) interface characteristics. The influence of the metallic mesh on the transparent conductive oxide sheet resistance has also been considered. A sputtered CTO layer shows a high average transmittance, over 90%. The Pt mesh yields a drastic reduction in the series resistance, almost one order, without affecting the optical properties. The ultrathin blocking layer of Ti oxide prevents charge recombination, improving the overall performance of the solar cells: +86% in efficiency, +50% in short circuit current, with respect to bare CTO.

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