Detection of wavelength in the range from ultraviolet to near infrared light using two parallel PtSe₂/thin Si Schottky junctions

Abstract

Wavelength sensor as a representative optoelectronic device plays an important role in many fields including visible light communication, medical diagnosis, and image recognition. Herein, a wavelength-sensitive detector with a new...

Ultraviolet Photodetectors Based on Nanometer-Thick Films of the Narrow Band Gap Semiconductor PbS

“…However, the photon absorption of PbS nanofilm moves to a deep area of PbS film with the increase of wavelength. Therefore, reducing the thickness of the PbS film reduces the absorption of relatively longer wavelengths of light, rendering thinner PbS films very sensitive to UV light. , Moreover, it can be speculated that it is possible to achieve deep ultraviolet PD by using ultrathin nanofilms. The above optical properties of the PbS film can be further verified from Figure d, which plots the numerical profiles of photon absorption rate of the PbS film under light irradiation from 365 to 1650 nm.…”

A self-driven wideband wavelength sensor based on an individual PdTe2/Thin Si/PdTe2 heterojunction

“…Very recently, exploiting the wavelength-dependent optical absorption behavior, our group has proposed a new type of wavelength sensor, in which the photocurrents of two identical Schottky junctions or metal–semiconductor–metal (MSM) devices stacked parallelly have a sharply different evolution with varying light wavelength. 21–24 Thus, the curve of photocurrent ratio of two devices versus light wavelength follows a monotone function, giving the ability to discriminate light wavelengths in a broad spectrum range. Although these devices can accurately sense the broadband light wavelength with average absolute errors as low as several nanometers, the employment of two identical devices, however, inevitably brings about increased challenges in device fabrication and inconvenience in use.…”

A Simple-Structured Perovskite Wavelength Sensor for Full-Color Imaging Application

“…The inset in Figure 3c shows that Δλ is within ±1.5 nm for all measurements, which are among the optimum reported results for such sensors. 24,32 This excellent reliability is attributed to the good performances of MSC PDs, such as low dark current and high responsivity (Figure S8, Supporting Information; Table 1). Figure 3d shows the work curve of the wavelength sensor after storage in the air (humidity: 45% RH; temperature: 26 °C) for different times (fresh, 10, 20, 30 days).…”

“…21−23 To satisfy both designs, silicon/germanium semiconductors, compound semiconductors, and new organic/ inorganic semiconductor materials have been developed and applied. 5,19,24,25 Perovskite materials are often used in electronic and optoelectronic devices including PDs, 20,26−29 solar cells, 30 and memory resistor devices 31,32 because of their higher electron−hole diffusion length than that of silicon. For instance, the diffusion length of simple solution-synthesized MAPbI 3 single crystals exceeds 3 mm under weak light, which is 10 times longer than that of lightly doped n-type silicon.…”

“…The gap between the filter and the photo-integrated device can generate color artifacts or moiré streaks in the image, whereas filterless wavelength sensors avoid this problem. , Based on the application, filterless wavelength sensors can be obtained using two designs strategies. One is the fabrication of photodetectors (PDs) sensitive to red (R), green (G), and blue (B) light for color imaging. − The other involves the fabrication of bandgap-tunable narrowband PDs combined with spectral reconstruction algorithms for multispectral imaging or spectrometry. − To satisfy both designs, silicon/germanium semiconductors, compound semiconductors, and new organic/inorganic semiconductor materials have been developed and applied. ,,, …”