Detection of terahertz∕sub-terahertz radiation by asymmetrically-shaped 2DEG layers

Seliuta, D.; Širmulis, Edmundas; Tamošiūnas, V.; Balakauskas, S.; Ašmontas, Steponas; Sužiedėlis, Algirdas; Gradauskas, Jonas; Valušis, Gintaras; Lisauskas, Alvydas; Roskos, Hartmut G.; Köhler, K.

doi:10.1049/el:20040412

Cited by 33 publications

(31 citation statements)

References 6 publications

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“…One should note that the induced voltage signal depends linearly on the incident radiation power at all the studied frequencies illustrating the suitability of the diode for power measurements [44].…”

Section: Deg Bow-tie Diodes Based On Gaas / Algaas Modulation-doped mentioning

confidence: 81%

New trends in terahertz electronics

Tamošiūnas¹

2006

Lithuanian J. Phys.

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The rapid evolution of terahertz (THz) applications in imaging, material diagnostics, communication systems, etc. stimulates an intensive search for new solutions in design and fabrication of compact emitters and receivers. The particular place of THz range in the electromagnetic spectrum -between microwaves and the infrared one -defines the requirement to merge together different concepts in the development of devices for THz electronics needs. The present overview covers several new topics illustrating unprecedented possibilities of modern semiconductor nanotechnology to realize innovative compact devices for terahertz electronics. We describe operation principles of quantum cascade lasers (QCLs) giving special emphasis to the specifics of THz quantum cascade devices and obstacles in their development. As an illustration of successful confluence of different physical approaches, we report on semiconductor nanostructure-based THz sensors -nanometric field effect transistors and asymmetric bow-tie diodes containing two-dimensional electron gas -which can successfully be employed for selective / broadband detection of the THz radiation.

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Section: Deg Bow-tie Diodes Based On Gaas / Algaas Modulation-doped mentioning

confidence: 81%

New trends in terahertz electronics

Tamošiūnas¹

2006

Lithuanian J. Phys.

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“…By including all the observed factors, some explanations are given to the experimental data presented in [9] and [10]. The observed reduction of the sensitivity is attributed to the reduction of coupling efficiency due to the antenna properties of the detector contacts.…”

Section: Discussionmentioning

confidence: 99%

“…The device operation principle is based on non-uniform electron heating in bow-tie diode with a spatially broken symmetry -one of its leaves is metallic while another one is semiconductor containing two-dimensional electron gas [9,10]. In order to improve the device operation, in particular, above 1 THz, one needs to know the incident radiation coupling related effects.…”

Section: Introductionmentioning

confidence: 99%

Frequency-dependent properties of InGaAs bow-tie detectors in terahertz range

Minkevičius¹,

Kašalynas²,

Seliuta³

et al. 2010

Lithuanian J. Phys.

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Finite-difference time-domain simulation results in bow-tie InGaAs diodes are presented. Dependences of electric field amplitude on frequency were investigated for various device shapes and sizes. It was shown that two metallized parts of the bow-tie type detector act as the separate antennas causing thus the experimentally observed fast sensitivity reduction at 1.63, 1.83, and 2.51 THz frequencies. Moreover, it has been demonstrated that the estimated effective average refractive index of the region around the antenna for all investigated angles and dimensions is nearly constant, and this constant value could be used for further estimation of frequency dependent properties in the case of other slightly altered bow-tie detector geometry.

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“…However, a lot of other diodes, e.g. camel [7], planar-doped barrier [8], heterojunction [9,10], hot carrier [11][12][13], all operating on the basis of the major carrier phenomena in semiconductors are proposed as well. All these majority-carrier devices, except the Schottky diodes, belong to the class of bulk-barrier diodes.…”

Section: Introductionmentioning

confidence: 99%

“…Formerly an original microwave diode was proposed by Harrison and Zucker [11] the operation of which was based on hot carrier phenomena in a semiconductor. Planar versions of the hot carrier diodes were elaborated where the n + -n silicon homojunction [12] and the modulation-doped GaAs/AlGaAs two-dimensional electron gas structure [13] was used for the MW detection. The aforementioned MW diodes are mainly fabricated of more or less complex epitaxial semiconductor structures, in most cases MBE grown.…”

Section: Introductionmentioning

confidence: 99%

Planar asymmetric dual diode for millimetre wave detection and power measurement

Sužiedėlis¹,

Ašmontas²,

Gradauskas³

et al. 2018

physics

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The design of a simple cost-effective planar semiconductor microwave diode is proposed. The operation is based on hot carrier phenomena and rectification of microwave currents flowing through the structure composed of two diodes connected in series and having different active region areas. A simplified technological process and the use of simplex semiconductor material result in the reduction of both the time and the cost of fabrication of a dual microwave diode. By choosing an appropriate GaAs substrate, two types of microwave diodes were produced simultaneously: one almost demonstrating the ohmic behaviour and the other two having the asymmetrical Schottky-like I-V characteristic. The Schottky-like planar diodes exhibited a higher responsivity to millimetre range microwave radiation and a faster response to pulsed (down to a nanosecond scale) excitation, but the ohmic ones demonstrated better noise properties.

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Detection of terahertz∕sub-terahertz radiation by asymmetrically-shaped 2DEG layers

Cited by 33 publications

References 6 publications

New trends in terahertz electronics

New trends in terahertz electronics

Frequency-dependent properties of InGaAs bow-tie detectors in terahertz range

Planar asymmetric dual diode for millimetre wave detection and power measurement

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