2008
DOI: 10.1016/j.bios.2007.10.013
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Detection of DNA hybridization and extension reactions by an extended-gate field-effect transistor: Characterizations of immobilized DNA–probes and role of applying a superimposed high-frequency voltage onto a reference electrode

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Cited by 30 publications
(10 citation statements)
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“…By converting the VDS–ID curve into VG using the VG–ID curve at constant VDS = 1 V, they were able to establish that the surface charge density changes due to DNA hybridization [ 32 ], and thus, by observing the change in surface charge density, they were able to detect DNA hybridization. This fully electric hybridization detection sensor has a detection limit of 7 fmol, provided that the probe density is 2.6 × 10 12 molecules/cm 2 [ 33 ].…”
Section: Vlsi Architectures In Dna Detectionmentioning
confidence: 99%
“…By converting the VDS–ID curve into VG using the VG–ID curve at constant VDS = 1 V, they were able to establish that the surface charge density changes due to DNA hybridization [ 32 ], and thus, by observing the change in surface charge density, they were able to detect DNA hybridization. This fully electric hybridization detection sensor has a detection limit of 7 fmol, provided that the probe density is 2.6 × 10 12 molecules/cm 2 [ 33 ].…”
Section: Vlsi Architectures In Dna Detectionmentioning
confidence: 99%
“…The electronic integration can also benefit from the unique capability of DNA to self-assemble in programmable structures (46) to realize 2D or 3D dense integration of nanometer sized devices (47). Also, the integration of biomolecules provides electronic components with natural optimized interfaces for bio sensing (48).…”
Section: Electrical Conduction Of Dna and Nano-dot Coated Dna In Airmentioning
confidence: 99%
“…Since it is very important for FET-based biosensors to achieve good isolation between the device and the solution, extended gate field effect transistor is frequently used (Chen et al 2003;Ishige et al 2009;Kamahori et al 2007;Kamahori et al 2008;Kim et al 2006). The extended-gate field effect transistor consists of two parts: one a sensing structure containing the sensitive membrane and the other a MOSFET structure.…”
Section: Introductionmentioning
confidence: 99%