Detailed simulation study of a dual material gate carbon nanotube field-effect transistor

Orouji, Ali A.; Arefinia, Zahra

doi:10.1016/j.physe.2008.10.005

Cited by 38 publications

(30 citation statements)

References 29 publications

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“…This CNTFET exhibits bipolar effects which deteriorates the device performance. The second type is MOS -like CNTFET [6,7], which is heavily doped in the CNT in source and drain. The source and drain are connected to the electrodes and form ohmic contacts between the metal electrode and CNT.…”

Section: Introductionmentioning

confidence: 99%

“…The channel tunneling current can be tuned by controlling the electrostatic potential of channel. Because of the unipolar characteristics and low leakage current, MOS -like CNTFET (hereinafter referred to as CNTFET) draws a lot of attentions from scholars [7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

“…On the other hand, to enhance the immunity against short -channel effects (SCEs), hetero -material -gate (HMG) structures have been proposed to improve CNTFETs performance [7,8]. In a HMG -CNTFET, two or three different materials with different work functions are used and laterally merged together.…”

Section: Introductionmentioning

confidence: 99%

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Channel and Gate Workfunction-Engineered CNTFETs for Low-Power and High-Speed Logic and Memory Applications

Wang¹,

Xu²,

Huang³

et al. 2016

JSTS:Journal of Semiconductor Technology and Science

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Abstract-Carbon Nanotube Field-Effect Transistors (CNTFETs) have been studied as candidates for post Si CMOS owing to the better electrostatic control and high mobility. To enhance the immunity against short -channel effects (SCEs), the novel channel and gate engineered architectures have been proposed to improve CNTFETs performance. This work presents a comprehensive study of the influence of channel and gate engineering on the CNTFET switching, high frequency and circuit level performance of carbon nanotube field-effect transistors (CNTFETs). At device level, the effects of channel and gate engineering on the switching and high frequency characteristics for CNTFET have been theoretically investigated by using a quantum kinetic model. This model is based on two-dimensional non-equilibrium Green's functions (NEGF) solved self -consistently with Poisson's equations. It is revealed that heteromaterial -gate and lightly doped drain and source CNTFET (HMG -LDDS -CNTFET) structure can significantly reduce leakage current, enhance control ability of the gate on channel, improve the switching speed, and is more suitable for use in low power, high frequency circuits. At circuit level, using the HSPICE with look -up table(LUT) based Verilog -A models, the impact of the channel and gate engineering on basic digital circuits (inverter, static random access memory cell) have been investigated systematically. The performance parameters of circuits have been calculated and the optimum metal gate workfunction combinations of Ф M1 /Ф M2 have been concluded in terms of power consumption, average delay, stability, energy consumption and power -delay product (PDP). In addition, we discuss and compare the CNTFETbased circuit designs of various logic gates, including ternary and binary logic. Simulation results indicate that LDDS -HMG -CNTFET circuits with ternary logic gate design have significantly better performance in comparison with other structures.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Channel and Gate Workfunction-Engineered CNTFETs for Low-Power and High-Speed Logic and Memory Applications

Wang¹,

Xu²,

Huang³

et al. 2016

JSTS:Journal of Semiconductor Technology and Science

View full text Add to dashboard Cite

show abstract

“…This CNTFET exhibits bipolar effect which deteriorates the device performance. The second type is MOS -like CNTFET [8][9][10], which is heavily doped in the CNT in source and drain. The source and drain are connected to the electrodes and form ohmic contacts between the metal electrode and CNT.…”

Section: Introductionmentioning

confidence: 99%

“…The channel tunneling current can be tuned by controlling the electrostatic potential of channel. Because of the unipolar characteristics and low leakage current, MOS -like CNTFET (hereinafter referred as CNTFET) draws a lot of attentions from scholars [9][10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Investigation of Hetero - Material - Gate in CNTFETs for Ultra Low Power Circuits

Wang¹,

Xu²,

Liu³

et al. 2015

JSTS:Journal of Semiconductor Technology and Science

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Abstract-An extensive investigation of the influence of gate engineering on the CNTFET switching, high frequency and circuit level performance has been carried out. At device level, the effects of gate engineering on the switching and high frequency characteristics for CNTFET have been theoretically investigated by using a quantum kinetic model. It is revealed that hetero -material -gate CNTFET(HMG -CNTFET) structure can significantly reduce leakage current, enhance control ability of the gate on channel, and is more suitable for use in low power and high frequency circuits. At circuit level, using the HSPICE with look -up table(LUT) based Verilog -A models, the performance parameters of circuits have been calculated and the optimum combinations of Ф M1 /Ф M2 /Ф M3 have been concluded in terms of power consumption, average delay, stability, energy consumption and power -delay product(PDP). We show that, compared to a traditional CNTFETbased circuit, the one based on HMG -CNTFET has a significantly better performance (SNM, energy, PDP). In addition, results also illustrate that HMG -CNTFET circuits have a consistent trend in delay, power, and PDP with respect to the transistor size, indicating that gate engineering of CNTFETs is a promising technology. Our results may be useful for designing and optimizing CNTFET devices and circuits.

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Transport study of gate and channel engineering on the surrounding-gate CNTFETs based on NEGF quantum theory

Wang

Yang

et al. 2013

J Comput Electron

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Detailed simulation study of a dual material gate carbon nanotube field-effect transistor

Cited by 38 publications

References 29 publications

Channel and Gate Workfunction-Engineered CNTFETs for Low-Power and High-Speed Logic and Memory Applications

Channel and Gate Workfunction-Engineered CNTFETs for Low-Power and High-Speed Logic and Memory Applications

Investigation of Hetero - Material - Gate in CNTFETs for Ultra Low Power Circuits

Transport study of gate and channel engineering on the surrounding-gate CNTFETs based on NEGF quantum theory

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