Detailed investigation of TLM contact resistance measurements on crystalline silicon solar cells

Guo, Sheng; Gregory, Geoffrey; Gabor, Andrew M.; Schoenfeld, Winston V.; Davis, Kristopher O.

doi:10.1016/j.solener.2017.05.015

Cited by 68 publications

(36 citation statements)

References 14 publications

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“…Thus, we neglect intermediate fingers (see Figure b). Their possible influence can be found elsewhere . Both contacts are connected to the emitter via contact resistivity ρ c .…”

Section: Simulationmentioning

confidence: 99%

“…The transfer of this property to the TLM sample is achieved by sample preparation with shallow grooves created with pulsed laser scribing and breaking at these trenches to avoid additional edge shunting. Otherwise the TLM measurement would be falsified, which is described in detail by Guo et al…”

Section: Simulationmentioning

confidence: 99%

“…The input parameters are selected on the basis of industrial cz‐PERC solar cells given by Fell et al, where the contact width w f is 60 μm, d f is 1.483 mm, ρ c is 2.7 mΩ cm, bulk resistivity ρ bulk is 1.5 Ω cm, wafer thickness t bulk of 170 μm, and a j s of 1 × 10 −14 A cm −2 is a typical saturation current density for highly efficient solar cells and is kept constant during simulation. A sample width Z of 3 mm was used to reduce the influence of the lateral finger conductivity on ρ c evaluation …”

Section: Simulationmentioning

confidence: 99%

“…Several solar cell research groups studied the effect of different sample properties or measuring conditions on the contact resistivity. Guo et al summarized the effects of sample geometry, e.g., stripe width and electrical properties such as edge shunting and nonuniform sheet resistance . The influence of intermediate fingers and a thick sample was investigated by Müller and Eidelloth and Brendel, respectively.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Numerical Simulations for In‐Depth Analysis of Transmission Line Method Measurements for Photovoltaic Applications—The Influence of the p–n Junction

Urban

Heitmann

Müller

2019

Physica Status Solidi (a)

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For optimization of solar cell perfomance, the knowledge of the specific contact resistivity between grid finger and emitter is an important component. The contact resistivity is typically characterized by transmission line method (TLM) measurement directly on samples made from complete fabricated solar cells. Large contact spacing on solar cells leads to high measured resistances and thus high voltage drops along the emitter, measuring between several finger distances. This, in turn, imposes a strong load on the p–n junction and can lead to a parasitic current flow over the wafer base itself. The influence of this current flow on the TLM measurement evaluation for typical solar cell parameters is investigated. The 2D simulation of TLM measurements is used to derive handling instructions to improve the contact resistivity measurements. For typical solar cell TLM stripes with emitter sheet resistances of about 150 Ω sq−1 and a reverse p–n junction characteristic similar to rshunt in the range of 10 kΩ cm2, an influence of about 10% or higher ρc evaluation uncertainty is expected.

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“…Thus, we neglect intermediate fingers (see Figure b). Their possible influence can be found elsewhere . Both contacts are connected to the emitter via contact resistivity ρ c .…”

Section: Simulationmentioning

confidence: 99%

Section: Simulationmentioning

confidence: 99%

Section: Simulationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Numerical Simulations for In‐Depth Analysis of Transmission Line Method Measurements for Photovoltaic Applications—The Influence of the p–n Junction

Urban

Heitmann

Müller

2019

Physica Status Solidi (a)

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show abstract

“…The transmission line method (TLM) [2,3], is another common way of measuring ρc as well as the sheet resistance Rsh (ohms/sq) of the underlying doped Si layer and the transfer length LT on commercial grade solar cells [4,5]. When applying this technique to cells, the devices are cut into strips parallel to their busbars so that current flow can be isolated between incrementally spaced contact pairs and the resultant resistance can be measured.…”

Section: Introductionmentioning

confidence: 99%

Non-Destructive Contact Resistivity Measurements on Solar Cells Using the Circular Transmission Line Method

Gregory

Gabor

Anselmo

et al. 2017

2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)

Self Cite

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S everal methods have been determined for measuring the contact resistivity of solar cell devices, but these methods are all either destructive in nature or require the fabrication of special metal contacts. In this paper, we present a non-destructive method for measuring the contact resistivity of commercial grade solar cells using the circular transmission line method. We first determine an optimal method for probing the total resistance of these structures on a solar cell and investigate the importance of measuring the exact dimensions of each contact. Then, by comparing the results of the measurement to traditional TLM results, we select a proper geometry for the circular patterns so that they can be hidden within the busbars of finished cells and not affect cell efficiency or aesthetic. Good correlation is demonstrated between automated circular TLM measurements performed on a new tool, the ContactSpot-PRO, and traditional TLM measurements performed manually. The implementation of this high-speed tool can allow contact resistance to be measured on every R&D or production cell with only a minor change in front silver paste screen artwork.

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Dopant‐free passivating contacts for crystalline silicon solar cells: Progress and prospects

Wang

Zhang

et al. 2022

EcoMat

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The evolution of the contact scheme has driven the technology revolution of crystalline silicon (c-Si) solar cells. The state-of-the-art high-efficiency c-Si solar cells such as silicon heterojunction (SHJ) and tunnel oxide passivated contact (TOPCon) solar cells are featured with passivating contacts based on doped Si thin films, which induce parasitic optical absorption loss and require capitalintensive deposition processes involving flammable and toxic gasses. A promising solution to tackle this problem is to employ dopant-free passivating contact, involving the use of transparent and cost-effective wide band gap materials. In this review, we first introduce the dopant-free passivating contact, from carrier transport mechanisms, material classification to evaluation methods. Then we focus on the advances in different strategies to improve cell performance, including material property optimization, structural and interfacial engineering, as well as various post-treatments. At the end, the challenge and perspective of dopant-free passivating contact c-Si solar cells are discussed.

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Detailed investigation of TLM contact resistance measurements on crystalline silicon solar cells

Cited by 68 publications

References 14 publications

Numerical Simulations for In‐Depth Analysis of Transmission Line Method Measurements for Photovoltaic Applications—The Influence of the p–n Junction

Numerical Simulations for In‐Depth Analysis of Transmission Line Method Measurements for Photovoltaic Applications—The Influence of the p–n Junction

Non-Destructive Contact Resistivity Measurements on Solar Cells Using the Circular Transmission Line Method

Dopant‐free passivating contacts for crystalline silicon solar cells: Progress and prospects

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