Designing HV active clamps for HBM robustness

Notermans, Guido; Quittard, O.; Heringa, A.; Mrcarica, Z.; Blanc, F.; Zwol, H. van; Smedes, T.; Keller, Thomas; Jong, Peter de

doi:10.1109/eosesd.2007.4401730

Cited by 14 publications

(2 citation statements)

References 10 publications

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“…That is to say, under normal circuit voltage, the device is in off-state. However, it should be quickly switching to the conducting state because of large current need to be released when ESD event occurs, play a role in protecting circuit [6] . Table 1 gives the doping and structural parameters of the device, combined with the structural element in Fig.…”

Section: Measurement and Analysis Of Sith For Esd Protectionmentioning

confidence: 99%

The Characteristics of ESD Protection Device Based on Static Induction Thyristors

Yang

Zhang

Zhao

2013

AMM

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A novel structure of ESD protection device based on the static induction thyristors (SITh) was in further investigation. Detailed analysis of the negative resistance characteristics of SITh was presented, especially its blocking and conducting states that satisfy the requirements in ESD events. The characteristics of SITh for ESD protection were obtained using the Time Domain Reflectometer (TDR) type of Transmission Line Pulse (TLP) testing system. The results illustrate that SITh for ESD protection has the following advantages: 1) It has a strong ESD stress handing capability (3.75 kV); 2) Its second breakdown current is large enough (2.5 A) to release great ESD current; 3) DC leakage current of SITh is very small (1 μA); 4) SITh can break through the limitations of transitional trigger voltages, whose trigger voltage is dynamically adjustable as well; 5) The ESD response time can be controlled through optimizing device structure of SITh.

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Section: Measurement and Analysis Of Sith For Esd Protectionmentioning

confidence: 99%

The Characteristics of ESD Protection Device Based on Static Induction Thyristors

Yang

Zhang

Zhao

2013

AMM

View full text Add to dashboard Cite

show abstract

“…For reason of area consumption, the DMOSFET may be designed as protection device itself. Sometimes this technique is also referred as ''active clamping" [1,2].…”

Section: Introductionmentioning

confidence: 99%