In this paper, the resistive switching characteristics in a Cu/HfO(2):Cu/Pt sandwiched structure is investigated for multilevel non-volatile memory applications. The device shows excellent resistive switching performance, including good endurance, long retention time, fast operation speed and a large storage window (R(OFF)/R(ON)>10(7)). Based on the temperature-dependent test results, the formation of Cu conducting filaments is believed to be the reason for the resistance switching from the OFF state to the ON state. By integrating the resistive switching mechanism study and the device fabrication, different resistance values are achieved using different compliance currents in the program process. These resistance values can be easily distinguished in a large temperature range, and can be maintained over 10 years by extrapolating retention data at room temperature. The integrated experiment and mechanism studies set up the foundation for the development of high-performance multilevel RRAM.
Mode and polarization-division multiplexing technologies (MDM and PDM)can offer considerable parallelism for optical multiplexing biosensors, complex optical neural networks, and high-capacity optical interconnects, while requiring only a single-wavelength laser source. Thanks to the mature fabrication processes of silicon nitride and superior material properties of lithium niobate, the silicon nitride loaded lithium niobate on insulator (LNOI) platform allows the integration of high-speed optical modulators and optical (de)multiplexing devices to achieve high-capacity and low-cost photonic integrated circuits suitable for data communication applications. In this contribution, MDM and PDM are investigated in a silicon nitride loaded LNOI (X-cut) platform. As a proof of concept, an asymmetrical directional coupler-based mode ( de)multiplexer (MMUX) and polarization splitter-rotator (PSR) are designed, fabricated, and experimentally demonstrated. The measured insertion losses are lower than 1.46 and 1.49 dB, while the inter-modal crosstalk is lower than −13.03 and −17.75 dB for the MMUX and PSR, respectively, for a wavelength range of 1525-1565 nm. A 40 Gbps data transmission experiment demonstrates the data transmission capabilities of the fabricated devices. The measured eye diagrams are clear and wide-open, and the bit error rate measurements show reasonable power penalties, indicating good device performance.
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