Design Trends in Fully Integrated 2.4 GHz CMOS SPDT Switches

Bhuiyan, Mohammad Arif Sobhan; Reaz, Mamun Bin Ibne; Jalil, Jubayer; Rahman, Labonnah Farzana; Chang, Tae‐Gyu

doi:10.2174/15734137113096660106

Cited by 26 publications

(13 citation statements)

References 14 publications

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“…In the CMOS process, substrate-floating may degrade the performance due to the low-resistivity substrate [3,14]; to solve this problem, triple-well NMOS devices that consist of a P-well that is embedded within a deep N-well to create an isolated body for the NMOSs from the P-substrate, as shown in Fig. 7, are used for this design [15].…”

Section: Triple-well Nmosmentioning

confidence: 99%

“…During the transmission phase, the switch connects the antenna to the power amplifier of the transmitter so that the large signal is radiated to the surroundings, and the low-power receiver circuit is simultaneously protected from being damaged [2]; alternatively, during the reception phase, it ensures that the low-noise amplifier receives the intended signal with a minimum loss. The key requisites for a T/R switch are an enhanced isolation, the minimal insertion loss, the maximum power-handling capacity, a high linearity, and an acceptable reliability for a large range of signal amplitudes [2,3].…”

Section: Introductionmentioning

confidence: 99%

“…To meet the performance requirements of T/R switches in terms of the standard CMOS technology, extensive research is being conducted throughout the world [3]. Yamamoto et al (2001) illustrated the basic concerns for the improved performance of a classic series-shunt-type T/R switch whereby only the optimization of the MOS-gate width has occurred [4].…”

Section: Introductionmentioning

confidence: 99%

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Design of an Active Inductor-Based T/R Switch in 0.13 μm CMOS Technology for 2.4 GHz RF Transceivers

Bhuiyan

Reaz²,

Badal

et al. 2016

Transactions on Electrical and Electronic Materials

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A high-performance transmit/receive (T/R) switch is essential for every radio-frequency (RF) device. This paper proposes a T/R switch that is designed in the CEDEC 0.13 μm complementary metal-oxide-semiconductor (CMOS) technology for 2.4 GHz ISM-band RF applications. The switch exhibits a 1 dB insertion loss, a 28.6 dB isolation, and a 35.8 dBm power-handling capacity in the transmit mode; meanwhile, for the 1.8 V/0 V control voltages, a 1.1 dB insertion loss and a 19.4 dB isolation were exhibited with an extremely-low power dissipation of 377.14 μW in the receive mode. Besides, the variations of the insertion loss and the isolation of the switch for a temperature change from -25℃ to 125℃ are 0.019 dB and 0.095 dB, respectively. To obtain a lucrative performance, an active inductor-based resonant circuit, body floating, a transistor W/L optimization, and an isolated CMOS structure were adopted for the switch design. Further, due to the avoidance of bulky inductors and capacitors, a very small chip size of 0.0207 mm 2 that is the lowest-ever reported chip area for this frequency band was achieved.

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Section: Triple-well Nmosmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Design of an Active Inductor-Based T/R Switch in 0.13 μm CMOS Technology for 2.4 GHz RF Transceivers

Bhuiyan

Reaz²,

Badal

et al. 2016

Transactions on Electrical and Electronic Materials

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“…It consists of three basic attributes; tags, readers and associated data-processing equipment [2]. The tags, attached to the objects from which information is to be retrieved, contain identification i.e.…”

Section: Introductionmentioning

confidence: 99%

Design of a band-pass filter in 0,18 μm CMOS for 2,4 GHz reader-less RFID transponder

et al. 2017

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Original scientific paper Radio Frequency Identification (RFID) based systems are ubiquitous nowadays. Band pass filters always play an important role in overall performance of an RFID transponder. In this paper, a band pass filter with a transistor only active inductor is presented for compact high performance reader-less RFID transponder. Post layout simulation result reveals that the centre frequency of the filter can be set to 2,42 GHz frequency with a bandwidth of 38 MHz. The filter core occupies an area of 0,004 mm 2 and dissipates only 1,3 mW at 1,5 V supply voltage. CEDEC 0,18 µm CMOS technology in Mentor Graphics environment has been used for the design of the proposed filter. Keywords: active inductor; band-pass filter; CMOS (Complementary Metal-Oxide Semiconductor); RFID (Radio Frequency Identification)Dizajn pojasnog filtra u 0,18 μm CMOS za 2,4 GHz RFID transponder bez čitača Izvorni znanstveni članak Sustavi temeljeni na Radio Frequency Identification (RFID) sada su široko rasprostranjeni. Pojasno fazni filtri igraju važnu ulogu u funkcioniranju RFID transpondera. U ovom radu, pojasno fazni filtar s induktorom aktivnim samo s tranzistorom prikazan je za kompaktni RFID transponder bez čitača visokih performansi. Rezultat simulacije rasporeda otkriva da središnja frekvencija filtra može biti postavljena na frekvenciju od 2,42 GHz sa širinom pojasa od 38 MHz. Jezgra filtra zauzima površinu od 0,004 mm 2 i gubi samo 1,3 mW kod napona napajanja od 1,5 V. Predloženi filtar dizajniran je pomoću CEDEC 0,18 μm CMOS tehnologije u Mentor Graphics okruženju. Ključne riječi: aktivni induktor; pojasno fazni filtar; CMOS (dopunski metalno oksidni poluvodič); RFID (radio frekvencijska identifikacija)

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“…Technological developments and use of wirelesssystem applications with low power consumption have become one of the main attractions in the circuit design [1,2]. Explosive growth of embedded sensors into radio frequency identification (RFID) tags are extensively used nowadays.…”

Section: Introductionmentioning

confidence: 99%

A low power serial output flash ADC in 0,18 µm CMOS process

Reaz

Amin

et al. 2015

Teh. vjesn.

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Original scientific paper This paper proposes a simple design of a flash analog-to-digital converter (ADC) in 0,18 μm CMOS technology. This ADC is expected to be used within a temperature sensor, which provides analog data output having a range of 360 mV to 560 mV. This system consists of three main blocks: the threshold inverter quantization (TIQ)-comparator, encoder and parallel input serial output (PISO) register. The design goal is to get a flash ADC with low power dissipation, small size and compatible with the temperature sensors. The method is proposed to set each of the transistor channel length, for finding out the threshold voltage difference of the inverter each on the TIQ comparator. The design has an input range of 285 to 600 mV and 6-bit resolution output. The chip area of the designed ADC is 844,48 × 764,77 µm 2 and the power dissipation is 0,162 µW with 1,6 V supply voltage. Keywords: CMOS, Comparator, Flash ADC, Temperature Sensor Serijski izlazni impulsni ADC male snage u 0,18 µm CMOS postupkuIzvorni znanstveni članak U radu se predlaže jednostavan projekt impulsno analogno-digitalnog pretvarača (ADC) u 0,18 μm CMOS tehnologiji. Taj bi se pretvarač trebao koristiti u senzoru temperature, koji daje izlaz analognih podataka u rasponu od 360 mV do 560 mV. Sustav se sastoji od tri glavna bloka: threshold inverter quantization (TIQ) -komparatora, kodnog uređaja (kodera) i parallel input serial output (PISO) registra. Svrha je projekta dobiti impulsni ADC s malim gubitkom energije, malih dimenzija i kompatibilnim sa senzorima temperature. Ovom bi se metodom trebala podesiti dužina svakog kanala tranzistora u svrhu pronalaženja razlike u ulaznom naponu pretvarača na TIQ komparatoru. Projektom se predviđa ulazni raspon od 285 do 600 mV i izlaz rezolucije 6-bita. Površina čipa projektiranog ADC je 844,48 × 764,77 µm 2 a gubitak energije iznosi 0,162 µW uz napajanje od 1,6 V.

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Design Trends in Fully Integrated 2.4 GHz CMOS SPDT Switches

Cited by 26 publications

References 14 publications

Design of an Active Inductor-Based T/R Switch in 0.13 μm CMOS Technology for 2.4 GHz RF Transceivers

Design of an Active Inductor-Based T/R Switch in 0.13 μm CMOS Technology for 2.4 GHz RF Transceivers

Design of a band-pass filter in 0,18 μm CMOS for 2,4 GHz reader-less RFID transponder

A low power serial output flash ADC in 0,18 µm CMOS process

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