Design topologies with dual‐ V _th and dual‐ T _ox assignment in 16 nm CMOS technology

Abstract

This study presents different topologies for the assignment of dual threshold voltage and dual gate oxide thickness in 16 nm complementary metal-oxide-semiconductor technology. The objective is to optimise the circuit in terms of static power dissipation, delay, and power-delay-product (pdp). Topologies namely direct, grouping, and divide-by-2 are simulated for (A + B) ⋅ C and conventional 1-bit full adder circuits. Results of the proposed topologies are compared with some of the existing techniques of leakage reduction i.e. dual-V th , dual-T ox and supply switching with ground collapse (SSGC). 1-bit full adder circuit using direct topology reduces static power to 99.98, 96.71, and 95.86% as compared to static power in dual-V th , dual-T ox , and SSGC techniques, respectively. The pdp of the circuit is significantly improved using proposed topologies. Thus, these topologies can be used for low power and high-performance applications with no area overhead.