Design Space of GaN Vertical Trench Junction Barrier Schottky Diodes: Comprehensive Study and Analytical Modeling

Yin, Jian; Chen, Sihao; Chen, Hang; Li, Shuti; Fu, Houqiang; Liu, Chao

doi:10.3390/electronics11131972

Cited by 5 publications

(3 citation statements)

References 30 publications

(24 reference statements)

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“…It is observed that the acceptor energy level of Mg is 150 meV above the valence band. Consequently, the concentration of ionized holes in GaN can be calculated by the following equation [16]:…”

Section: Simulation Detailsmentioning

confidence: 99%

Simulation and Comprehensive Analysis of AlGaN/GaN HBT for High Voltage and High Current

Wang,

Zhang,

et al. 2023

Electronics

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We present a series of TCAD analysis of gallium nitride (GaN) heterojunction bipolar transistors (HBTs) that investigates the impact of various key parameters on the gain characteristics, output characteristics, and breakdown characteristics. It has been observed that the DC gain of the AlGaN/GaN HBTs exhibits a non-linear relationship with the increase in the Al fraction. Specifically, the DC gain initially rises, then declines after reaching its peak value at approximately 7%. By optimizing the concentration of the base and the concentration and thickness of the collector epitaxial layer, it is possible to achieve devices with breakdown voltages of 1270 V (with a collector thickness of 6 μm and a carrier concentration of 2 × 1016 cm−3), specific on-resistance of 0.88 mΩ·cm2, and a current gain of 73. In addition, an investigation on breakdown characteristics is conducted for HBTs with two types of substrates, namely QV-HBTs and FV-HBTs, at different inclinations of the ramp. We propose that critical angles are 79° and 69° to prevent the surface breakdown of the device, which helps to achieve an avalanche in GaN HBTs. We anticipate that the aforementioned findings will offer valuable insights for designing GaN-based power HBTs with elevated breakdown thresholds, heightened current densities, and increased power capabilities.

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Section: Simulation Detailsmentioning

confidence: 99%

Simulation and Comprehensive Analysis of AlGaN/GaN HBT for High Voltage and High Current

Wang,

Zhang,

et al. 2023

Electronics

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“…[3] Recently, the development of high-quality freestanding GaN substrates has advanced the research of GaN-based vertical power devices. [4][5][6] Compared with their lateral counterparts, vertical GaN power devices feature superior scalability and higher voltage endurance, [7][8][9][10][11][12] which is crucial for high-power-density electronic systems. Thanks to their low turn-on voltage and fast switching capability, [13] vertical GaN Schottky barrier diodes (SBDs) stand out among different types of vertical GaN power devices.…”

Section: Introductionmentioning

confidence: 99%

Design Strategy of Vertical GaN Power Schottky Barrier Diodes with p‐GaN Junction Termination Extension and Experimental Demonstration of Selective p‐Doping by Implantation

Chen,

Wang

et al. 2024

Physica Status Solidi (a)

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Herein, the impact of the key structural parameters on the breakdown characteristics of the vertical gallium nitride (GaN) power Schottky barrier diodes (SBDs) with p‐GaN junction termination extension (JTE) structures by numerical simulation is systematically investigated. With a p‐type GaN structure incorporated at the edge of the Schottky junction, the electric field crowding at the edge of Schottky anode can be alleviated, effectively avoiding the premature breakdown of the devices. It is found that the acceptor concentration, thickness, width, and surface charge density of the incorporated JTE are closely associated with the electric field distribution and the reverse breakdown characteristics. The vertical SBDs with optimum p‐GaN JTE parameters feature a dramatic improvement in Baliga's figure of merit, without obvious degradation in the forward and dynamic performance. Selective p‐doping and acceptor activation is also demonstrated, which verifies the fabrication feasibility of the proposed JTE structures. Through the results, the way can be paved for the design and fabrication of high‐performance GaN vertical power devices toward high‐voltage, high‐power, and high‐speed applications.

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“…The role of the PD logic circuit is mainly managing power for effective use by a logic decision algorithm that allocates the power to the actuator array where the shape change must be performed. The Schottky barrier diode's breakdown voltage determines each rectenna's maximum operating voltage [11,13,15]. Accordingly, the maximum voltage of the rectenna array is not enough for smart actuators.…”

Section: Introductionmentioning

confidence: 99%

A New Approach to Power Distribution by a Dual-Gate MOSFET for Controlling a Smart Actuator Array

Lee

Kim

2022

Electronics

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Remotely driven smart actuator technology by microwave is attractive since it simplifies and reduces the complexity and weight of the remote system. A rectifying antenna (rectenna) array receives and converts microwave power into DC power for actuators, and the power collected from the rectenna array should be accurately allocated and distributed to each actuator. In this research, a new power distribution (PD) logic circuit is studied to control an actuator array effectively. The PD logic circuit was designed and tested to validate it. The preliminary design was tested for a 4 × 4 piezoelectric actuator array with a 16 dual-gate MOSFET array and a computer-controlled 16-channel DAC board. Additionally, power compensation as a remedial approach for a partial power failure of the array was integrated. This PD scheme with a new logic device simplifies the thousands of control cables required for connecting each array element. The performance and limitations of the designed PD circuit are discussed.

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Design Space of GaN Vertical Trench Junction Barrier Schottky Diodes: Comprehensive Study and Analytical Modeling

Cited by 5 publications

References 30 publications

Simulation and Comprehensive Analysis of AlGaN/GaN HBT for High Voltage and High Current

Simulation and Comprehensive Analysis of AlGaN/GaN HBT for High Voltage and High Current

Design Strategy of Vertical GaN Power Schottky Barrier Diodes with p‐GaN Junction Termination Extension and Experimental Demonstration of Selective p‐Doping by Implantation

A New Approach to Power Distribution by a Dual-Gate MOSFET for Controlling a Smart Actuator Array

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