Design, performance and application of high voltage GaAs FETs

Miller, M.

doi:10.1109/csics.2005.1531825

Cited by 4 publications

(1 citation statement)

References 5 publications

(6 reference statements)

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“…GaAs based pHEMTs (Pseudomorphic High Electron Mobility Transistors, Fig. 1) are commercially available, and are extensively used for power RF applications (3) . We have designed lateral power devices using a commercially available, 0.5 µm feature size GaAs pHEMT process (4) .…”

Section: Gaas Phemts For Power Conversionmentioning

confidence: 99%

Gallium Arsenide IC Technology for Power Supplies on Chip

et al. 2015

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This paper presents a power IC technology platform based on AlGaAs/InGaAs/AlGaAs pseudomorphic field-effect transistors (pHEMTs) on a GaAs substrate. A quantitative assessment of a foundry-available 11-V GaAs pHEMT process indicates that owing to their superior material properties, the intrinsic figure of merit for pHEMT switching devices exhibits an order of magnitude improvement over state-of-the-art silicon NMOS transistors. The characterization results for GaAs pHEMTs with a breakdown voltage up to 47 V are presented and shown to be comparable to GaN-based transistors for power switching applications. An integrated pHEMT DC-DC converter that can switch at frequencies above 100 MHz is demonstrated. A 4.2-V pHEMT buck converter designed for envelope tracking applications is able to achieve 88% conversion efficiency at 100 MHz.

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Section: Gaas Phemts For Power Conversionmentioning

confidence: 99%