Design of very low voltage CMOS rectifier circuits

Cardoso, António Silva; Schneider, M.C.; Montoro, C.G.

doi:10.1109/casme.2010.5706674

Cited by 12 publications

(4 citation statements)

References 4 publications

(4 reference statements)

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“…Extensions of this model for voltage multipliers and other input signals are presented in [27] and [28]. Equation (4) further confirms that for low input voltage (power ≤ 10 dBm), an impedance matching network between the source and the diode is necessary to improve the detected output voltage and efficiency.…”

Section: Rf To DC Power Convertermentioning

confidence: 68%

Optimization of Passive Low Power Wireless Electromagnetic Energy Harvesters

Nimo

Grgić

Reindl

2012

Sensors

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This work presents the optimization of antenna captured low power radio frequency (RF) to direct current (DC) power converters using Schottky diodes for powering remote wireless sensors. Linearized models using scattering parameters show that an antenna and a matched diode rectifier can be described as a form of coupled resonator with different individual resonator properties. The analytical models show that the maximum voltage gain of the coupled resonators is mainly related to the antenna, diode and load (remote sensor) resistances at matched conditions or resonance. The analytical models were verified with experimental results. Different passive wireless RF power harvesters offering high selectivity, broadband response and high voltage sensitivity are presented. Measured results show that with an optimal resistance of antenna and diode, it is possible to achieve high RF to DC voltage sensitivity of 0.5 V and efficiency of 20% at −30 dBm antenna input power. Additionally, a wireless harvester (rectenna) is built and tested for receiving range performance.

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Section: Rf To DC Power Convertermentioning

confidence: 68%

Optimization of Passive Low Power Wireless Electromagnetic Energy Harvesters

Nimo

Grgić

Reindl

2012

Sensors

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show abstract

“…Transient simulation is considered to get the input power and output power of the circuit: due to the presence of capacitance on the output side, transient simulation takes some time to reach a steady state, [2,3,26,27] so the steady state waveform after 38 ns is uniformly selected for analysis. The input voltage, input current, load voltage and load current on both sides of the circuit vary as shown in Fig.…”

Section: Tran Simulationmentioning

confidence: 99%

A high rectification efficiency Si_0.14Ge_0.72Sn_0.14-Ge_0.82Sn_0.18-Ge quantum structure n-MOSFET for 2.45 GHz weak energy microwave wireless energy transmission

Zhang¹,

Song²,

Xue³

et al. 2022

Chinese Phys. B

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The design strategy and efficiency optimization of a Ge-based n-type metal–oxide–semiconductor field-effect transistor (n-MOSFET) with a Si0.14Ge0.72Sn0.14–Ge0.82Sn0.18–Ge quantum structure used for 2.45 GHz weak energy microwave wireless energy transmission is reported. The quantum structure combined with δ-doping technology is used to reduce the scattering of the device and improve its electron mobility; at the same time, the generation of surface channels is suppressed by the Si0.14Ge0.72Sn0.14 cap layer. By adjusting the threshold voltage of the device to 91 mV, setting the device aspect ratio to 1 μm/0.4 μm and adopting a novel diode connection method, the rectification efficiency of the device is improved. With simulation by Silvaco TCAD software, good performance is displayed in the transfer and output characteristics. For a simple half-wave rectifier circuit with a load of 1 pf and 20 kΩ, the rectification efficiency of the device can reach 7.14% at an input power of –10 dBm, which is 4.2 times that of a Si MOSFET (with a threshold voltage of 80 mV) under the same conditions; this device shows a better rectification effect than a Si MOSFET in the range of –30 dBm to 6.9 dBm.

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“…Measured results for both modes are presented in figure 4 and clarify that the nominal input voltage for the low power mode can be achieved at significantly lower supply currents. A two-stage rectifier built with MOS transistors is used to rectify the AC-Signal [4]. The two-stage structure is necessary in order to achieve a sufficiently large amplitude for the rectified signal.…”

Section: High and Low Power Modementioning

confidence: 99%

Stabilization and Protection of the Shunt-LDO regulator for the HL-LHC pixel detector upgrades

Kampkoetter¹,

Stiller²,

Traversi³

et al. 2020

Proceedings of Topical Workshop on Electronics for Particle Physics — PoS(TWEPP2019)

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Design of very low voltage CMOS rectifier circuits

Cited by 12 publications

References 4 publications

Optimization of Passive Low Power Wireless Electromagnetic Energy Harvesters

Optimization of Passive Low Power Wireless Electromagnetic Energy Harvesters

A high rectification efficiency Si_0.14Ge_0.72Sn_0.14-Ge_0.82Sn_0.18-Ge quantum structure n-MOSFET for 2.45 GHz weak energy microwave wireless energy transmission

Stabilization and Protection of the Shunt-LDO regulator for the HL-LHC pixel detector upgrades

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Design of very low voltage CMOS rectifier circuits

Cited by 12 publications

References 4 publications

Optimization of Passive Low Power Wireless Electromagnetic Energy Harvesters

Optimization of Passive Low Power Wireless Electromagnetic Energy Harvesters

A high rectification efficiency Si0.14Ge0.72Sn0.14-Ge0.82Sn0.18-Ge quantum structure n-MOSFET for 2.45 GHz weak energy microwave wireless energy transmission

Stabilization and Protection of the Shunt-LDO regulator for the HL-LHC pixel detector upgrades

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A high rectification efficiency Si_0.14Ge_0.72Sn_0.14-Ge_0.82Sn_0.18-Ge quantum structure n-MOSFET for 2.45 GHz weak energy microwave wireless energy transmission