2006 IEEE International SOC Conference 2006
DOI: 10.1109/socc.2006.283854
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Design of Ultra-Low Power Combinational Standard Library Cells Using A Novel Leakage Reduction Methodology

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Cited by 8 publications
(2 citation statements)
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“…Similar to the method in Ref. [12], a single high threshold PMOS transistor is inserted between the pull-up and pull-down networks, which are composed of low threshold transistors. Extra NMOS and PMOS transistors are added in parallel with the pull-up and pull-down networks to keep the voltage potential between the source node of the high threshold transistor and power supply (V DD , and the drain node of the high threshold transistor and ground, at equivalent levels to minimize leakage in sleep mode.…”
Section: Mtcmos Threshold Gatesmentioning
confidence: 99%
“…Similar to the method in Ref. [12], a single high threshold PMOS transistor is inserted between the pull-up and pull-down networks, which are composed of low threshold transistors. Extra NMOS and PMOS transistors are added in parallel with the pull-up and pull-down networks to keep the voltage potential between the source node of the high threshold transistor and power supply (V DD , and the drain node of the high threshold transistor and ground, at equivalent levels to minimize leakage in sleep mode.…”
Section: Mtcmos Threshold Gatesmentioning
confidence: 99%
“…One major drawback of this method is that partitioning the circuit into appropriate logic blocks and sleep transistor sizing is difficult for large circuits. An alternative fine-grained architecture, shown in Figure 5, incorporates the MTCMOS technique within every gate [14], using low-Vt transistors for the Pull-Up Network (PUN) and Pull-Down Network (PDN) and a high-Vt transistor to gate the leakage current between the two networks. Two additional low-Vt transistors are included in parallel with the PUN and PDN to maintain nearly equivalent voltage potential across these networks during sleep mode (i.e., X1 is approximately VDD and X2 is approximately GND).…”
Section: Introduction To Mtcmosmentioning
confidence: 99%