Design of the Threshold-Controllable Memristor Emulator Based on NDR Characteristics

Abstract

Due to the high manufacturing cost of memristors, an equivalent emulator has been employed as one of the mainstream approaches of memristor research. A threshold-type memristor emulator based on negative differential resistance (NDR) characteristics is proposed, with the core part being the R-HBT network composed of transistors. The advantage of the NDR-based memristor emulator is the controllable threshold, where the state of the memristor can be changed by setting the control voltage, which makes the memristor circuit design more flexible. The operation frequency of the memristor emulator is about 250 kHz. The experimental results prove the feasibility and correctness of the threshold-controllable memristor emulator circuit.

Control method and analysis of potential application based on memristor

“…Researchers say that memristor can allow mobile phones to be used for weeks or more without needing to be recharged, and laptops to retain information long after the battery has run down. It is also expected to challenge the flash memory commonly used in digital devices because of the ability of storing information long after the battery has run down [5]. Using the chip made from this invention, it can store information more quickly than flash memory, consume less electrical energy and occupy less space.…”