Design of the low-temperature AlN interlayer for GaN grown on Si (111) substrate

Cong, Guangwei; Lü, Yuan; Peng, Wenqin; Liu, Xianglin; Wang, Xiaohui; Wang, Zhanguo

doi:10.1016/j.jcrysgro.2004.11.419

Cited by 45 publications

(37 citation statements)

References 11 publications

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“…The screw type dislocation could be reduced by both two kinds of buffer. According to the report [15], the LT-AlN layer cannot always stop edge threading dislocations and introduces new dislocations that result in worse quality. Fortunately, insertion of SL buffer cannot only reduce both screw and edge threading dislocations, but also help flatten the interface.…”

Section: Resultsmentioning

confidence: 99%

Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD

Liu

Wang

et al. 2007

Journal of Crystal Growth

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Section: Resultsmentioning

confidence: 99%

Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD

Liu

Wang

et al. 2007

Journal of Crystal Growth

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“…Zhang et al [12] and Liu et al [14] also observed a clear influence of V/III ratio during the LT AlN IL growth on the strain condition of the following GaN layer. Moreover, it was shown that the microstructure of the layer preceding the LT AlN IL played an important role on the stress evolution of the IL and subsequent GaN layer [6,13,15]. Taking into account the aforementioned factors and to simplify the device processing for quick assessment of buffer BD, we have designed two series of samples, i.e.…”

Section: Methodsmentioning

confidence: 99%

“…Cross-sectional TEM (XTEM) of a reference sample (not shown) also revealed that most of the threading dislocations generated at the C-doped Al 0.08 Ga 0.92 N layer and bottom transition layer interface already annihilated at this thickness. This 1 µm-thick C-doped Al 0.08 Ga 0.92 N thus provides a good starting point for insertion of LT ALN IL and is expected to be beneficial for slowing down the compressive stress relaxation in the following C-doped Al 0.08 Ga 0.92 N after the IL [6,13]. In all the samples, the C-doped Al 0.08 Ga 0.92 N layer was grown at 980 °C.…”

Section: Methodsmentioning

confidence: 99%

MOCVD growth of DH‐HEMT buffers with low‐temperature AlN interlayer on 200 mm Si (111) substrate for breakdown voltage enhancement

Zhao

Liang

Kandaswamy

et al. 2016

Phys. Status Solidi C

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In this work, we have systematically investigated the technique of low‐temperature AlN interlayer in MOCVD growth of double heterojunction high‐electron‐mobility transistors buffer stacks on 200 mm Si (111) substrates. We have demonstrated that a continuous compressive stress can be maintained by insertion of interlayers which compensated a large tensile stress during cooling for a thick buffer. This eventually led to a low wafer bow and a good surface quality that enabled wafers with full device stack meeting the specifications for processing in our 200 mm CMOS pilot line. We also demonstrated at both forward and reverse bias conditions a significantly improved vertical buffer breakdown voltage (which is defined at a leakage current of 1 µA/mm2 in the present work) of >500 V at 25 °C and >300 V at 150 °C, respectively. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Information about the microscopic configuration of transition metal centers has been extracted from their paramagnetic resonance in many crystals, ranging from the purely covalent group IV semiconductors to the ionic group I-VII salts [5,6]. The aim of this study is to determine the magneto-optical properties of the Mn ground state in epitaxial GaN film.…”

Section: Introductionmentioning

confidence: 99%

Electron Spin Transition Line-width of Mn-doped Wurtzite GaN Film for the Quantum Limit

Park¹,

Lee²,

Lee³

et al. 2012

Journal of Magnetics

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Starting with Kubo's formula and using the projection operator technique introduced by Kawabata, EPR lineprofile function for a Mn 2+-doped wurtzite structure GaN semiconductor was derived as a function of temperature at a frequency of 9.49 GHz (X-band) in the presence of external electromagnetic field. The line-width is barely affected in the low-temperature region because there is no correlation between the resonance fields and the distribution function. At higher temperature the line-width increases with increasing temperature due to the interaction of electrons with acoustic phonons. Thus, the present technique is considered to be more convenient to explain the resonant system as in the case of other optical transition systems.

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Design of the low-temperature AlN interlayer for GaN grown on Si (111) substrate

Cited by 45 publications

References 11 publications

Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD

Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD

MOCVD growth of DH‐HEMT buffers with low‐temperature AlN interlayer on 200 mm Si (111) substrate for breakdown voltage enhancement

Electron Spin Transition Line-width of Mn-doped Wurtzite GaN Film for the Quantum Limit

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