Design of RFICs in 0.35(mu)m Si/SiGe BiCMOS Technology for a 5GHz Domotic Transmitter

Alimenti, F.; Borgarino, M.; Codeluppi,; Palazzari,; Pifferi,; Roselli,; Scorzoni,; Fantini,

doi:10.1109/ecwt.2005.1617744

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“…2 depicts the schematic of the integrated transmitter. Its basic building blocks, namely the up-conversion mixer and the output power amplifier, have been tested separately by differential on-wafer measurements, as reported in [1]. The mixer is based on a Gilbert-cell architecture where the Q1 and Q2 transistors are the driver stage and the Q3-Q6 transistors act as the switching quad.…”

Section: Introductionmentioning

confidence: 99%

A Single-Chip 5GHz WLAN Transmitter in 0.35μm Si/SiGe BiCMOS Technology

Alimenti

Borgarino

Codeluppi

et al. 2006

2006 European Microwave Integrated Circuits Conference

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This paper deals with the design of a 5GHz WLAN heterodyne transmitter for domotic applications. The transmitter has been realized in commercial 0.35μm Si/SiGe BiCMOS technology with the purpose to reduce cost while achieve an high integration level. Measurements on a prototype, wire-bonded on a low-cost FR4 printed circuit board, have been carried-out showing an overall linear gain of 14dB an input referred compression point of -6.5dBm and a third-order input intercept point of +2.7dBm.

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Section: Introductionmentioning

confidence: 99%