Design of precision capacitors for analog applications

This paper presents a high-k barrier type anodic AI 2 03 Metal-Insulator-Metal (MIM) capacitor for mixed signalJRF applications. The anodic oxide MIM capacitor shows high capacitance density of 6.01fFJllm 2 and low voltage coefficient of capacitance less than 500ppmlV. Due to reduced defect density and improved polarization, the capacitor exhibits variability of less than 6% in the frequency range of 1KHz to IMHz at 3V. The fabricated capacitor also shows a high breakdown field of 8.7MV/cm. The measured leakage current density is InAlcm 2 at 5V at room temperature which is the lowest reported value till date. The capacitor also exhibits improved reliability as TBD of 10 years for applied voltage of 2V at room temperature. The capacitor meets the requirements of ITRS 2012 predicted for wireless and mixed signal/RF technologies.

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Design of precision capacitors for analog applications

Cited by 5 publications

References 8 publications

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