Design of Pixel Circuit Using a-IGZO TFTs to Enhance Uniformity of AMOLED Displays by Threshold Voltage Compensation

Sodhani, Aditya; Goswami, Rupam; Kandpal, Kavindra

doi:10.1007/s13369-021-05457-2

Cited by 5 publications

(2 citation statements)

References 20 publications

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“…Along with the electrical characteristics of TFTs, their bias stability is one of the most important factors for practical electronic applications. The bias stability determines the lifespan of a device [17]. The deposition of an oxide thin film through sputtering, a physical vapor deposition (PVD) method, is currently the most widely used method owing to the outstanding electrical characteristics and bias stability of sputtered AOS TFTs [18].…”

Section: Introductionmentioning

confidence: 99%

Physico-Chemical Origins of Electrical Characteristics and Instabilities in Solution-Processed ZnSnO Thin-Film Transistors

et al. 2022

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We investigate the physico-chemical origins that determine the transistor characteristics and stabilities in sol-gel processed zinc tin oxide (ZTO) thin-film transistors (TFTs). ZTO solutions with Sn/(Sn+Zn) molar ratios from 0.3 to 0.6 were synthesized to demonstrate the underlying mechanism of the electrical characteristics and bias-induced instabilities. As the Sn/(Sn+Zn) ratio of ZTO is increased, the threshold voltage of the ZTO TFTs negatively shifts owing to the gradual increase in the ratio of oxygen vacancies. The ZTO TFTs with an Sn/(Sn+Zn) ratio of 0.4 exhibit highest saturation mobility of 1.56 cm2/Vs lowest subthreshold swing and hysteresis of 0.44 V/dec and 0.29 V, respectively, due to the desirable atomic states of ZTO thin film. Furthermore, these also exhibit outstanding positive bias stability due to the low trap density at the semiconductor-dielectric interface. On the other hand, the negative bias stress-induced instability gradually increases as the proportion of tin increases because the negative bias stress instability originates from the ionization of oxygen vacancies. These results will contribute to the optimization of the composition ratio in rare-metal-free oxide semiconductors for next-generation low-cost electronics.

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Section: Introductionmentioning

confidence: 99%

Physico-Chemical Origins of Electrical Characteristics and Instabilities in Solution-Processed ZnSnO Thin-Film Transistors

et al. 2022

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“…IGZO is a promising material for the design of next-generation intelligent semiconductors. Power consumption is efficient because of the low leakage current [ 33 , 34 , 35 , 36 ], and large-area processing is possible owing to high uniformity [ 37 ]. In addition, low-temperature processing is possible, and there are no restrictions on the substrate, which is advantageous for flexible device manufacturing [ 38 ], and the process compatibility with the back-end-of-line (BEOL) processing is good [ 39 , 40 , 41 ].…”

Section: Introductionmentioning

confidence: 99%

Effect of Post-Annealing on Barrier Modulations in Pd/IGZO/SiO2/p+-Si Memristors

et al. 2022

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In this article, we study the post-annealing effect on the synaptic characteristics in Pd/IGZO/SiO2/p+-Si memristor devices. The O-H bond in IGZO films affects the switching characteristics that can be controlled by the annealing process. We propose a switching model based on using a native oxide as the Schottky barrier. The barrier height is extracted by the conduction mechanism of thermionic emission in samples with different annealing temperatures. Additionally, the change in conductance is explained by an energy band diagram including trap models. The activation energy is obtained by the depression curve of the samples with different annealing temperatures to better understand the switching mechanism. Moreover, our results reveal that the annealing temperature and retention can affect the linearity of potentiation and depression. Finally, we investigate the effect of the annealing temperature on the recognition rate of MNIST in the proposed neural network.

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30‐3: Direct Observation of 2 Delta L in a‐IGZO TFT Using Scanning Capacitance Microscopy

Lee,

Kim

et al. 2024

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Herein, we have directly investigated a 2 delta L as the diffusion length in a‐IGZO TFT using a scanning capacitance microscopy (SCM) technique at the cross section of TFTs instead of indirect normal transmission line method (TLM). Moreover, we revealed that the difference of 2 delta L leads the variation of total parastic capacitance in devices, which play a key role in the properites of EL currents in case of display devices.

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Design of Pixel Circuit Using a-IGZO TFTs to Enhance Uniformity of AMOLED Displays by Threshold Voltage Compensation

Cited by 5 publications

References 20 publications

Physico-Chemical Origins of Electrical Characteristics and Instabilities in Solution-Processed ZnSnO Thin-Film Transistors

Physico-Chemical Origins of Electrical Characteristics and Instabilities in Solution-Processed ZnSnO Thin-Film Transistors

Effect of Post-Annealing on Barrier Modulations in Pd/IGZO/SiO2/p+-Si Memristors

30‐3: Direct Observation of 2 Delta L in a‐IGZO TFT Using Scanning Capacitance Microscopy

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