Design of nonvolatile and efficient Polarization-Rotating optical switch with phase change material

Zhu, Danfeng; Wang, Xueyu; Li, Jing; Ye, Han; Yu, Zhongyuan; Liu, Yumin

doi:10.1016/j.optlastec.2022.108065

Cited by 8 publications

(4 citation statements)

References 51 publications

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“…31,32 Beyond this, Se-based PCMs, such as Ge 2 Sb 2 Se 4 Te 1 and Sb 2 Se 3 , show a good application prospect in the field of reconfigurable nonvolatile metasurfaces 30,33−35 and low-loss waveguide transmission in photonic integrated circuits. 36 Moreover, Se has higher electronegativity than Te due to its stronger metalloid character, indicating the stronger interaction between Sb and Se than that between Sb and Te accompanied with stable mechanical properties. Inspired by this feature, flexible STSe may provide a novel function performance to realize stable and endurable devices and wearable electronics, such as human activity sensing.…”

Section: Introductionmentioning

confidence: 99%

“…Thus, the resistance and the thermal stability of Sb 2 Te x Se 3– x (STSe) could be elevated. In addition, Se can be utilized to improve the crystallization temperature of Sb 4 Te and overcome the thermal stability limit of GeTe for high-temperature applications, with phase change temperature elevated more than 100 K after proper Se content doping. , Beyond this, Se-based PCMs, such as Ge 2 Sb 2 Se 4 Te 1 and Sb 2 Se 3 , show a good application prospect in the field of reconfigurable non-volatile metasurfaces ,− and low-loss waveguide transmission in photonic integrated circuits . Moreover, Se has higher electronegativity than Te due to its stronger metalloid character, indicating the stronger interaction between Sb and Se than that between Sb and Te accompanied with stable mechanical properties.…”

Section: Introductionmentioning

confidence: 99%

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Ultra-Stable, Endurable, and Flexible Sb₂Te_xSe_3–x Phase Change Devices for Memory Application and Wearable Electronics

Chen

et al. 2022

ACS Appl. Mater. Interfaces

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Flexible memory and wearable electronics represent an emerging technology, thanks to their reliability, compatibility, and superior performance. Here, an Sb2Te x Se3–x (STSe) phase change material was grown on flexible mica, which not only exhibited superior nature in thermal stability for phase change memory application but also revealed novel function performance in wearable electronics, thanks to its excellent mechanical reliability and endurance. The thermal stability of Sb2Te3 was improved obviously with the crystallization temperature elevated 60 K after Se doping, for the enhanced charge localization and stronger bonding energy, which was validated by the Vienna ab initio simulation package calculations. Based on the ultra-stability of STSe, the STSe-based phase change memory shows 65 000 reversible phase change ability. Moreover, the assembled flexible device can show real-time monitoring and recoverability response in sensing human activities in different parts of the body, which proves its effective reusability and potential as wearable electronics. Most importantly, the STSe device presents remarkable working reliability, reflected by excellent endurance over 100 s and long retention over 100 h. These results paved a novel way to utilize STSe phase change materials for flexible memory and wearable electronics with extreme thermal and mechanical stability and brilliant performance.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Ultra-Stable, Endurable, and Flexible Sb₂Te_xSe_3–x Phase Change Devices for Memory Application and Wearable Electronics

Chen

et al. 2022

ACS Appl. Mater. Interfaces

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“…The functional region is composed of a strip silicon waveguide and HRIM deposited on the silica substrate. A 340 nm thick stripe silicon waveguide is employed to sufficiently support TM-polarized modes [36,37]. HRIM is embedded in an upper and lower silicon waveguide.…”

Section: Mode Order Convertermentioning

confidence: 99%

Ultracompact Integrated Mode-Order Converter and Reciprocal Optical Diode with Etched Subwavelength Structures

Zhu,

Deng,

Chen

et al. 2023

Photonics

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Three ultracompact integrated photonic devices are proposed, assisted by etched structures. A mode-order converter (MOC) is achieved with a footprint of 0.85 × 1.4 μm2, which exhibits high performances with insertion loss (IL) below 0.34 dB and mode purity (MP) above 90% within 100 nm waveband. Moreover, a mode blocking filter (MBF) is proposed based on a subwavelength grating with a footprint of 0.8 × 4.12 μm2, which allows the propagation of TM0 mode but blocks the TM1 mode with a remarkably high extinction ratio of 31.6 dB at the wavelength of 1550 nm. Finally, a compact reciprocal optical diode (ROD) is presented by cascading the abovementioned MOC and MBF with a footprint of 0.85 × 5.9 μm2. This ROD enables one-way transmissions for both TM0 mode and TM1 mode with contrast ratios of 19.74 dB and 32.04 dB, respectively. The design methodology paves a new way for mode manipulation in integrated multimode photonic circuits.

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“…At present, the most widely studied and used chalcogenide compounds are GST and Ge 2 Sb 2 Se 4 Te 1 (GSST), and remarkable achievements have been made in fields related to the infrared communication band, like all-photonic memories, optical switching, reconfigurable meta-optics, and neuromorphic computing. [30][31][32][33][34][35][36][37][38][39][40][41][42][43] However, research on their application in the visible light band is still in its infancy, especially the usage of GSST, which has not yet been reported.…”

Section: Introductionmentioning

confidence: 99%

Reflective Full‐Color Structural Colors with High Brightness and High Purity Based on Ge₂Sb₂Se₄Te₁ Chalcogenide Film

Duan,

Chen,

et al. 2023

Advanced Optical Materials

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This study proposes a general strategy for constructing an asymmetric Fabry–Perot structure based on an ultra‐thin composite absorber, Ni/Ge2Sb2Se4Te1, to produce reflective full‐color structural colors with high brightness and purity. The composite absorber effectively enhances the strong interference effect of thin film, which can significantly reduce the reflection bandwidth of the target band and the reflectivity of the non‐target band. Under the premise of optimizing the five‐layer base structure, full‐color structural colors can be tuned by only changing the thickness of the LaTiO3 layer. Using the ion‐assisted electron beam evaporation technique, a simple and efficient film deposition process, six color devices (namely red, orange, yellow, green, blue, and purple) are successfully prepared with reflection peaks exceeding 90%. The chromaticity coordinates of the proposed high‐purity red, green, and blue (RGB) samples are (0.554, 0.339), (0.280, 0.600), and (0.164, 0.075), respectively. These coordinates are fairly close to the standard RGB color coordinates used in liquid crystal displays. This device has a simple structure with a novel material combination and a low production cost, which makes it feasible for mass production using just one coating run process. It has excellent application potential in various fields such as micro‐nano displays, anti‐counterfeiting measures, reflective color filters, and decorations.

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Design of nonvolatile and efficient Polarization-Rotating optical switch with phase change material

Cited by 8 publications

References 51 publications

Ultra-Stable, Endurable, and Flexible Sb₂Te_xSe_3–x Phase Change Devices for Memory Application and Wearable Electronics

Ultra-Stable, Endurable, and Flexible Sb₂Te_xSe_3–x Phase Change Devices for Memory Application and Wearable Electronics

Ultracompact Integrated Mode-Order Converter and Reciprocal Optical Diode with Etched Subwavelength Structures

Reflective Full‐Color Structural Colors with High Brightness and High Purity Based on Ge₂Sb₂Se₄Te₁ Chalcogenide Film

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Design of nonvolatile and efficient Polarization-Rotating optical switch with phase change material

Cited by 8 publications

References 51 publications

Ultra-Stable, Endurable, and Flexible Sb2TexSe3–x Phase Change Devices for Memory Application and Wearable Electronics

Ultra-Stable, Endurable, and Flexible Sb2TexSe3–x Phase Change Devices for Memory Application and Wearable Electronics

Ultracompact Integrated Mode-Order Converter and Reciprocal Optical Diode with Etched Subwavelength Structures

Reflective Full‐Color Structural Colors with High Brightness and High Purity Based on Ge2Sb2Se4Te1 Chalcogenide Film

Contact Info

Product

Resources

About

Ultra-Stable, Endurable, and Flexible Sb₂Te_xSe_3–x Phase Change Devices for Memory Application and Wearable Electronics

Ultra-Stable, Endurable, and Flexible Sb₂Te_xSe_3–x Phase Change Devices for Memory Application and Wearable Electronics

Reflective Full‐Color Structural Colors with High Brightness and High Purity Based on Ge₂Sb₂Se₄Te₁ Chalcogenide Film