Design of New Nonlinear Optical Materials Based on Porous III-V Compounds

Tiginyanu, I. M.; Kravetsky, I. V.; Marowsky, G.; Monecke, J.; Hartnagel, H.L.

doi:10.1002/1521-3951(200009)221:1<557::aid-pssb557>3.0.co;2-6

Cited by 9 publications

(6 citation statements)

References 6 publications

(8 reference statements)

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“…At the same time nanoporous Si obtained by electrochemical dissolution of bulk material in HF-based electrolytes exhibits intense visible luminescence resulting in the development of electroluminescent structures and displays. [8][9][10] The enhanced nonlinear optical response and intense luminescence reported for porous III-V compounds may enable the development of a fully integrated light source and frequency converter subsystem. [3][4][5][6][7] Compared with porous Si, III-V materials have a number of important advantages related to the possibility of changing the chemical composition and further extending the fields of applications of porous structures using properties specific to acentricity.…”

Section: Introductionmentioning

confidence: 99%

Correlation between morphology and cathodoluminescence in porous GaP

Stevens‐Kalceff

Tiginyanu

Langa

et al. 2001

Journal of Applied Physics

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Porous layers fabricated by anodic etching of n-GaP substrates in a sulfuric acid solution were studied by electron microscopy and cathodoluminescence ͑CL͒ microanalysis. The morphology of porous layers was found to depend strongly upon the anodization conditions. When the etching process starts at the initial surface, ''catacomb-like'' pores and current-line oriented pores are introduced at low and high anodic current densities, respectively. After the initial development of either kind of pore, further anodization at the current density of about 1 mA/cm 2 favors the propagation of pores along ͗111͘ crystallographic directions. The spatial and spectral distribution of CL in bulk and porous samples is presented. A comparative analysis of the secondary electron and panchromatic CL images evidenced a porosity induced increase in the emission efficiency.

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Section: Introductionmentioning

confidence: 99%

Correlation between morphology and cathodoluminescence in porous GaP

Stevens‐Kalceff

Tiginyanu

Langa

et al. 2001

Journal of Applied Physics

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“…It was found in an early study that the effective third-order susceptibility of a composite optical material formed of sub-wavelengththick layers of titanium dioxide and a conjugated polymer can substantially exceed those of the materials from which it is constructed [208]. Among porous materials, enhancement of nonlinear optical properties was first demonstrated in GaP [209][210][211] and InP [212,213]. It was demonstrated that both second harmonic generation (SHG) and terahertz (THZ) emission are increased in porous materials as compared to their bulk counterparts.…”

Section: Enhanced Nonlinear Optical Properties: Second Harmonic Gener...mentioning

confidence: 99%

“…triangular prism-like pores in the GaP (111) membrane) can result in large third order fluctuations which strongly intensify the nonlinear optical response [209,211]. Figure 37(a) demonstrates that, under identical conditions, the porous GaP membranes with triangular prismlike pores exhibit a SHG efficiency two orders of magnitude higher than that of the bulk material [210]. In spite of the electric field screening in the semiconductor, the third order field fluctuations responsible for the SHG are very large in case of pores with sharp edges.…”

Section: Enhanced Nonlinear Optical Properties: Second Harmonic Gener...mentioning

confidence: 99%

Porous semiconductor compounds

Monaico

Tiginyanu

Ursaki

2020

Semicond. Sci. Technol.

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In this review paper, we present a comparative analysis of the electrochemical dissolution of III-V (InP, GaAs, GaN), II-VI (ZnSe, CdSe) and SiC semiconductor compounds. The resulting morphologies are discussed, including those of porous layers and networks of low-dimensional structures such as nanowires, nanobelts, and nanomembranes. Self-organized phenomena in anodic etching are disclosed, leading to the formation of controlled porous patterns and quasi-ordered distribution of pores. Results of templated electrochemical deposition of metal nanowires, nanotubes and nanodots are summarized. Porosification of some compounds is shown to improve luminescence characteristics as well as to enhance photoconductivity, second harmonic generation and Terahertz emission. Possible applications of porous semiconductor compounds in various areas are discussed.

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“…1 In addition, these materials also show high scattering efficiency, enhanced second harmonic generation efficiency, providing them a great potential for numerous novel applications. [2][3][4][5][6][7] Nanotextured semiconductors have also been used as the substrate for growth of reduced stress high quality homo-epitaxial layers. 8 9 In last decade, GaN have been used in many photonic applications due to its wider bandgap (3.4 eV), and better chemical, mechanical, and thermal stability as compared to conventional III-V semiconductors.…”

Section: Introductionmentioning

confidence: 99%

Micro Raman and Photoluminescence Spectroscopy of Nano-Porous n and p Type GaN/Sapphire(0001)

Ingale¹,

Pal²,

Dixit³

et al. 2007

j nanosci nanotechnol

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Variation of depth within a single etching spot (3 mm circular diameter) was observed in nanoporous GaN epilayer obtained on photo-assisted electrochemical etching of n and p-type GaN. The different etching depth regions were studied using microRaman and PL(yellow region) for both n-type and p-type GaN. From Raman spectroscopy, we observed that increase in disorder is accompanied by stress relaxation, as depth of etching increases for n-type GaN epilayer. This is well corroborated with scanning electron microscopy results. Contrarily, for p-type GaN epilayer we found that for minimum etching depth, stress in epilayer increases with increase in disorder. This is understood with the fact that as grown p-type GaN is more disordered compared to n-type GaN due to heavy Mg doping and further disorder leads to lattice distortion leading to increase in stress.

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Design of New Nonlinear Optical Materials Based on Porous III-V Compounds

Cited by 9 publications

References 6 publications

Correlation between morphology and cathodoluminescence in porous GaP

Correlation between morphology and cathodoluminescence in porous GaP

Porous semiconductor compounds

Micro Raman and Photoluminescence Spectroscopy of Nano-Porous n and p Type GaN/Sapphire(0001)

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