Design of MXene contacts for high-performance WS2 transistors

Li, Chenliang; Guo, Jing; Wang, Chaoying; Ma, Decai; Wang, Baolai

doi:10.1016/j.apsusc.2020.146701

Cited by 24 publications

(9 citation statements)

References 47 publications

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“…[34] At present, in order to decrease or eliminate the Schottky barrier, quasi-Ohmic contact has been widely studied. [35][36][37] Theoretically, the Schottky barrier can be controlled by the metal work function to obtain an ideal MSJ. [38] However, in practice, due to the presence of multiple non-ideal factors at the metal-semiconductor interfaces, such as metal/defect-induced gap states (MIGS/DIGS), mid-gap states and the formation of interface dipoles, which result in Fermi level pinning (FLP) and make the Schottky-Mott (SM) rule no longer applicable.…”

Section: Developingmentioning

confidence: 99%

Efficient Ohmic Contact in Monolayer CrX₂N₄ (X = C, Si) Based Field‐Effect Transistors

Shu

Liu

Zhou

et al. 2023

Adv Elect Materials

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Developing Ohmic contact systems or achieving low contact resistance is significant for high‐performance semiconductor devices. This work comprehensively investigates the interfacial properties of CrX2N4 (X = C, Si) based field‐effect transistors (FETs) with different metal (Ag, Au, Cu, Ni, Pd, Pt, Ti, and graphene) electrodes by using electronic structure calculations and quantum transport simulations. It is highlighted that the stronger interlayer coupling allows CrC2N4 to form an n‐type Ohmic contact with Ti electrode in the vertical direction. Furthermore, the absence of tunneling barrier at the CrC2N4–Ti interface greatly improves the electron injection efficiency. On the other hand, the studied metals form Schottky contact with CrC2N4 at the lateral interface due to Fermi level pinning (FLP) effects. Surprisingly, the strong FLP effects restrict the Schottky barrier heights of CrSi2N4‐metal contacts to a narrow range. Where Ag, Au, Ni, Pd, Pt, Ti electrodes and Ag, Ti electrodes form ideal ohmic contact with CrSi2N4 in the vertical and lateral directions, respectively, while the other metals form quasi‐ohmic contact. Ti exhibits the highest contact performance as the electrode in both CrC2N4 and CrSi2N4 based FETs. The findings may provide fundamental understanding for designing high‐performance and energy‐efficient FETs based on CrX2N4.

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Section: Developingmentioning

confidence: 99%

Efficient Ohmic Contact in Monolayer CrX₂N₄ (X = C, Si) Based Field‐Effect Transistors

Shu

Liu

Zhou

et al. 2023

Adv Elect Materials

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“…Compared to 3D metal electrodes, 2D metal electrodes have attracted extensive attention due to the dangling-bond-free surface. ,− Different from the chemical bonding between 3D metals and 2D semiconductors, 2D metals easily form the weak van der Waals (vdW) interaction with 2D semiconductors. , The weak interfacial interactions can suppress the MIGS and reduce the interface dipoles, which will result in a weak FLP effect and thus tunable SBH. , For example, monolayer MoS 2 in contact with Sb(012) close to the quantum limit and achieve a low contact resistance through vdW interactions . The zero SBH and ultralow contact resistance can be found in Bi-MoS 2 FETs .…”

Section: Introductionmentioning

confidence: 99%

Electric Field Induced Schottky to Ohmic Contact Transition in Fe₃GeTe₂/TMDs Contacts

Jiang

Sun

2023

ACS Appl. Electron. Mater.

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Although the two-dimensional transition metal dichalcogenides (TMDs) present excellent electrical properties, the contact resistance at the interface of metal/TMDs limits the device performance. Herein, we use 2D metallic Fe3GeTe2 (FGT) as an electrode in contact with TMDs semiconductors MX2 (M = Mo, W; X = S, Se, Te) and investigate the contact properties of FGT/MX2 based on density functional theory calculations. We demonstrated that FGT/MX2 presents n-type Schottky contacts, and their n-type Schottky barrier heights are lower than that of the most common bulk metal contacts with MX2, suggesting that FGT can be used as an efficient metallic electrode for MX2. The transitions from n-type Schottky contact to p-type Schottky contact and from Schottky contact to Ohmic contact can be achieved in FGT/MX2 under the electric field. This work not only illustrates an effective method to modulate the contact types and Schottky barrier heights of FGT/MX2 contacts but also provides a route for designing the nanodevices based on FGT/MX2 electrical contacts.

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“…Al-Ti 3 C 2 is a promising electric nanodevice. Li et al [ 22 ] systematically investigated the interfacial properties of monolayer WS 2 in contact with a series of MXenes using first-principles calculations. The results showed that Ti 3 C 2 couples strongly with WS 2 , leading to the metallization of monolayer WS 2 and the formation of ideal Ohmic contacts in the vertical direction.…”

Section: Introductionmentioning

confidence: 99%

The Combined Effects of an External Field and Novel Functional Groups on the Structural and Electronic Properties of TMDs/Ti3C2 Heterostructures: A First-Principles Study

Zheng

Wang

et al. 2023

Nanomaterials

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The stacking of Ti3C2 with transition metal dihalide (TMDs) materials is an effective strategy to improve the physical properties of a single material, and the tuning of the related properties of these TMDs/Ti3C2 heterostructures is also an important scientific problem. In this work, we systematically investigated the effects of an external field and novel functional groups (S, Se, Cl, Br) on the structural and electronic properties of TMDs/Ti3C2X2 heterostructures. The results revealed that the lattice parameters and interlayer distance of TMDs/Ti3C2 increased with the addition of functional groups. Both tensile and compressive strain obviously increased the interlayer distance of MoS2/Ti3C2X2 (X = S, Se, Cl, Br) and MoSe2/Ti3C2X2 (X = Se, Br). In contrast, the interlayer distance of MoSe2/Ti3C2X2 (X = S, Cl) decreased with increasing compressive strain. Furthermore, the conductivity of TMDs/Ti3C2 increased due to the addition of functional groups (Cl, Br). Strain caused the bandgap of TMDs to narrow, and effectively adjusted the electronic properties of TMDs/Ti3C2X2. At 9% compressive strain, the conductivity of MoSe2/Ti3C2Cl2 increased significantly. Meanwhile, for TMDs/Ti3C2X2, the conduction band edge (CBE) and valence band edge (VBE) at the M and K points changed linearly under an electric field. This study provides valuable insight into the combined effects of an external field and novel functional groups on the related properties of TMDs/Ti3C2X2.

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Design of MXene contacts for high-performance WS2 transistors

Cited by 24 publications

References 47 publications

Efficient Ohmic Contact in Monolayer CrX₂N₄ (X = C, Si) Based Field‐Effect Transistors

Efficient Ohmic Contact in Monolayer CrX₂N₄ (X = C, Si) Based Field‐Effect Transistors

Electric Field Induced Schottky to Ohmic Contact Transition in Fe₃GeTe₂/TMDs Contacts

The Combined Effects of an External Field and Novel Functional Groups on the Structural and Electronic Properties of TMDs/Ti3C2 Heterostructures: A First-Principles Study

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Design of MXene contacts for high-performance WS2 transistors

Cited by 24 publications

References 47 publications

Efficient Ohmic Contact in Monolayer CrX2N4 (X = C, Si) Based Field‐Effect Transistors

Efficient Ohmic Contact in Monolayer CrX2N4 (X = C, Si) Based Field‐Effect Transistors

Electric Field Induced Schottky to Ohmic Contact Transition in Fe3GeTe2/TMDs Contacts

The Combined Effects of an External Field and Novel Functional Groups on the Structural and Electronic Properties of TMDs/Ti3C2 Heterostructures: A First-Principles Study

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Efficient Ohmic Contact in Monolayer CrX₂N₄ (X = C, Si) Based Field‐Effect Transistors

Efficient Ohmic Contact in Monolayer CrX₂N₄ (X = C, Si) Based Field‐Effect Transistors

Electric Field Induced Schottky to Ohmic Contact Transition in Fe₃GeTe₂/TMDs Contacts