Organic-inorganic hybrid metal halide perovskites, an emerging class of solution processable photoactive materials, welcome a new member with a one-dimensional structure. Herein we report the synthesis, crystal structure and photophysical properties of one-dimensional organic lead bromide perovskites, C4N2H14PbBr4, in which the edge sharing octahedral lead bromide chains [PbBr4 2−]∞ are surrounded by the organic cations C4N2H14 2+ to form the bulk assembly of core-shell quantum wires. This unique one-dimensional structure enables strong quantum confinement with the formation of self-trapped excited states that give efficient bluish white-light emissions with photoluminescence quantum efficiencies of approximately 20% for the bulk single crystals and 12% for the microscale crystals. This work verifies once again that one-dimensional systems are favourable for exciton self-trapping to produce highly efficient below-gap broadband luminescence, and opens up a new route towards superior light emitters based on bulk quantum materials.

Herein, we report a new color tuning approach for highly luminescent nanoscale lead(ii) bromide perovskites with a quasi-2D layered structure. By synthetically manipulating the quasi-2D layered structure, different quantum size confinement effects can be realized to enable a precise color tuning of emissions ranging from deep blue to bright green.

We report a facile one-pot synthetic method to prepare highly luminescent layered lead(II) bromide perovskite microdisks with the lateral size of a few micrometers and thickness of 100-150 nm, featuring narrow deep blue emissions with quantum yields of up to 53% in toluene solutions and thin films at room temperature.

A chemical vapor deposition method is developed for thickness‐controlled (one to four layers), uniform, and continuous films of both defective gallium(II) sulfide (GaS): GaS0.87 and stoichiometric GaS. The unique degradation mechanism of GaS0.87 with X‐ray photoelectron spectroscopy and annular dark‐field scanning transmission electron microscopy is studied, and it is found that the poor stability and weak optical signal from GaS are strongly related to photo‐induced oxidation at defects. An enhanced stability of the stoichiometric GaS is demonstrated under laser and strong UV light, and by controlling defects in GaS, the photoresponse range can be changed from vis‐to‐UV to UV‐discriminating. The stoichiometric GaS is suitable for large‐scale, UV‐sensitive, high‐performance photodetector arrays for information encoding under large vis‐light noise, with short response time (<66 ms), excellent UV photoresponsivity (4.7 A W–1 for trilayer GaS), and 26‐times increase of signal‐to‐noise ratio compared with small‐bandgap 2D semiconductors. By comprehensive characterizations from atomic‐scale structures to large‐scale device performances in 2D semiconductors, the study provides insights into the role of defects, the importance of neglected material‐quality control, and how to enhance device performance, and both layer‐controlled defective GaS0.87 and stoichiometric GaS prove to be promising platforms for study of novel phenomena and new applications.

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Frequency-upconverted fluorescence and stimulated emission induced by multiphoton absorption (MPA) have attracted muchi nterest. As compared with low-order MPA processes,t he construction of high-order MPAp rocesses is highly desirable and rather attractive,yet remains aformidable challenge due to its inherent low transition probability.W e report the observation of the first experimental frequencyupconverted fluorescence and stimulated emission by simultaneous six-photon excitation in an organic molecular system. The well-designed organic conjugated system based on crossshaped spiro-fused ladder-type oligo(p-phenylene)s (SpLÀz, z = 1-3) manifests reasonably high MPAc ross-sections and brilliant luminescence emission simultaneously.T he six-photon absorption cross-section of SpL-3 with an extended pconjugation was evaluated as 8.67 10 À169 cm 12 s 5 photon À5 . Exceptionally efficient 2-to 6-photon excited stimulated emission was achieved under near-infrared laser excitation.

Carbon is one of the most fascinating elements due to its structurally diverse allotropic forms stemming from its bonding varieties (sp, sp2, and sp3). Exploring new forms of carbon has always been the eternal theme of scientific research. Herein, we report the amorphous (AM) carbon materials with high fraction of sp3 bonding recovered from compression of fullerene C60 under high pressure and high temperature previously unexplored. Analysis of photoluminescence and absorption spectra demonstrates that they are semiconducting with a bandgap range of 1.5–2.2 eV, comparable to that of widely used amorphous silicon. Comprehensive mechanical tests demonstrate that the synthesized AM-III carbon is the hardest and strongest amorphous material known so far, which can scratch diamond crystal and approach its strength. The produced AM carbon materials combine outstanding mechanical and electronic properties, and may potentially be used in photovoltaic applications that require ultrahigh strength and wear resistance.

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