Design of MoS₂/graphene heterostructure thin film sensors for high performance NO₂ gas sensor applications

Abstract

In this paper, we fabricate a large-area chemiresitive type MoS2/graphene films sensor is grown by spray pyrolysis technique. The prepared sensor films were characterization by XRD, SEM, TEM Raman and BET analysis. The synergistic effect between MoS2 and graphene through the CVD method produces such a hierarchical layer-by-layer assembly of the thin film structure. MoS2/graphene hybrid films not only show enhanced NO2 sensitivity compared to NO2 sensitivity alone. Graphene or MoS2 films, but they also exhibit characteristics of rapid response and strong reproducibility. Selectiveness and stability findings demonstrate the outstanding sensing properties of the MoS2 thin film sensor. The MoS2/G showed higher sensitivity (81%) towards NO2 gas at the concentration of 1000 ppm followed by graphene (22 %) and MoS2 (45 %) based sensors in sequence. The MoS2/G sensor also exhibits fast response (12 s) and recovery time (17 s) than other sensor samples. The concept of operation and sensing mechanism behind their impressive results has also been studied in depth. The effect of humidity on the performance of gas sensing was also discussed in the point of practical device applications.

Vertical heterostructure of graphite–MoS2 for gas sensing

“…The response is further improved in humid conditions as compared to the dried atmosphere (Fig. 6a), consistent with the findings of Sakthivel and co-workers 47 for enhanced sensitivity of graphene-MoS 2 hybrid. As discussed in the Raman spectroscopy, KPFM investigation and density functional theory simulation, the presence of NO 2 in humid conditions (i.e., H 2 O + NO 2 ) induces higher p-doped MoS 2 receptors by modulation of Fermi energy towards the valence band, consequently enhances the response.…”

Investigations on MoS2 plasma by infra-red pulsed laser irradiation in high vacuum

“…In our experiments, the molybdenum disulfide film was deposited on a graphene oxide (GO) substrate for its properties that permit to realization of innovative micro-and macrooptoelectronic devices as optical filters, transistors and sensors, as reported in the literature [24][25][26].…”