Design of Miniaturized On-Chip Bandpass Filters Using Inverting-Coupled Inductors in (Bi)-CMOS Technology

Zhu, He; Zhu, Xi; Yang, Yang; Sun, Yichuang

doi:10.1109/tcsi.2019.2948754

Cited by 30 publications

(4 citation statements)

References 26 publications

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“…Unlike the conventional distributed components usage for filter designs [7][8], the quasi-lumped components approach has become popular lately [9][10]. One of the main emerging approaches is to increase the self-coupling resonators by broadside coupling (metal stack-up) [11,12]. Specifically, broadside-coupled meander-line resonator (BCMLR) based design has achieved very small dimensions [13,14].…”

Section: Introductionmentioning

confidence: 99%

A Tunable D-Band Filter Based on MOSCAP in 65nm CMOS Technology

2023

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In this paper, a D-band varactor-based tunable bandpass filter is proposed in 65nm CMOS Technology. The filter is composed of coupled lines loaded with a pair of MOSCAPs that control the passband of the filter. The effects of MOSCAP parameters in terms of the quality factor and the tuning range are studied. The proper placement of the MOSCAP along the resonator is the key parameter to keep insertion loss as low as possible while the tuning range remains intact. A cross-coupled line between input/output ports introduces a pair of transmission zeros and significantly reduces the size of the filter. The tuning range of the proposed structure is 10 % (136 ∼ 150 GHz). For this frequency band, the fractional bandwidth (FBW) varies between 10.9 and 11.8 % and the in-band insertion loss is between 4 and 8.2 dB. The overall size of the filter is 0.11λ 0 × 0.095λ 0 . Measurements for the filter show good agreement with the simulation results.

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Section: Introductionmentioning

confidence: 99%

A Tunable D-Band Filter Based on MOSCAP in 65nm CMOS Technology

2023

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“…To further reduce the length, the slow-wave structures [10,11] and the co-planar waveguide (CPW) [12,13] are proposed though the overall size is still relatively large. In recent years, the coupled transmission lines based resonator is extensively explored due to its compact size [14][15][16][17][18][19][20][21][22][23][24][25][26][27]. It makes use implementing the transmission zeros at the required frequency.…”

Section: Introductionmentioning

confidence: 99%

Design of a Ka-Band U-Shaped Bandpass Filter with 20-GHz Bandwidth in 0.13-μm BiCMOS Technology

2020

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In this work, the design of a novel Ka-band miniaturized bandpass filter with broad bandwidth is demonstrated by using inversely coupled U-shaped transmission lines. In the proposed filter, two transmission zeros can be generated within a cascaded U-shaped structure and it can also be proven that, by inversely coupling two stacked U-shaped transmission lines, the notch frequency at the upper stopband can be shifted to a lower frequency, which results in a smaller chip size. The key parameters affecting the performance of the proposed filter are investigated in detail with the effective lumped-element circuit illustrated. Fabricated in a 0.13-μm SiGe BiCMOS process, the proposed filter achieves an insertion loss of 3.6 dB at a frequency of 28.75 GHz and the measured bandwidth is from 20.75 GHz to 41 GHz. The return loss is better than −10 dB from 20.5 GHz to 39 GHz. The lower transmission zero is located at 11.75 GHz with a suppression of 54 dB while the upper transmission zero is around 67 GHz with an attenuation of 34.6 dB. The measurement agrees very well with the simulation results and the overall chip size of the proposed filter is 176 × 269 μm2.

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“…However, the stopband of the filters mentioned above is relatively narrow. To extend the stopband bandwidth, inverting-coupled inductors are used for filter design [18]. Nevertheless, such method suffers from the relatively large insertion loss and large radiation loss at stopband.…”

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confidence: 99%

“…Nevertheless, such method suffers from the relatively large insertion loss and large radiation loss at stopband. On the other hand, most of the on-chip filters are mainly concentrated on first-or second-order BPF designs [3], [4], [5], [6], [7], [8], [9], [10], [11], [12], [13], [14], [15], [16], [17], [18], [19], [20], [21], which limit the passband bandwidth and passband selectivity. A third-order wideband BPF is proposed using broadside-coupled resonators [22], which exhibits relatively large insertion loss.…”

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confidence: 99%

On-Chip mm-Wave Second-/Third-Order BPF and Balun With Wide Stopband and Low Radiation Loss Using SIDGS Resonators in 40-nm CMOS

Tang

Luo

2023

IEEE Trans. Microwave Theory Techn.

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In this article, two millimeter-wave substrateintegrated defected ground structure (SIDGS) resonators are proposed for filters and balun implementation. Such SIDGS resonators are composed of defected ground structure (DGS) with grounded shield and surrounding vias, which not only exhibit wide stopband with low radiation loss but also are flexible to integrate with active circuits. Using different coupling methods, second-/third-order bandpass filters (BPFs) and filtering balun are designed based on the proposed SIDGS resonators. The filters and balun are fabricated in a standard 40-nm complementary metal-oxide-semiconductor (CMOS) technology. The secondorder filter is centered at 28 GHz with an insertion loss of the 2.7-and 3-dB FBW of 20.4%. Meanwhile, the stopband extends to 140 GHz with a rejection level of 30 dB. The third-order filter operates at 28 GHz with an insertion loss of the 2.9-and 3-dB FBW of 47%. Meanwhile, the stopband extends to 170 GHz with a rejection level of 27 dB. The filtering balun operating at 25 GHz with the 3-dB FBW of 32% exhibits in-band amplitude/phase imbalances of 0.6 dB and ±1.1 • , respectively. The minimum in-band insertion loss is 2 dB excluding the theoretical 3-dB loss. The stopband extends to 175 GHz with a rejection level of 30 dB.

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Design of Miniaturized On-Chip Bandpass Filters Using Inverting-Coupled Inductors in (Bi)-CMOS Technology

Cited by 30 publications

References 26 publications

A Tunable D-Band Filter Based on MOSCAP in 65nm CMOS Technology

A Tunable D-Band Filter Based on MOSCAP in 65nm CMOS Technology

Design of a Ka-Band U-Shaped Bandpass Filter with 20-GHz Bandwidth in 0.13-μm BiCMOS Technology

On-Chip mm-Wave Second-/Third-Order BPF and Balun With Wide Stopband and Low Radiation Loss Using SIDGS Resonators in 40-nm CMOS

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