Design of Microwave GaAs MESFET's for Broad-Band Low-Noise Amplifiers

Analysis of RF scattering parameters and noise and power performances of RF‐power MOS in 0.15‐μm RF cmos technology for RF SOC applications

“…The noise figures of the RF-power n-MOSFET with 400-m total gate width at V DS ϭ 2.5 V and various V GS bias conditions were measured on wafer by using an automated NP5 measurement system from ATN Microwave Incorporation. The measured noise parameters satisfy the following equation [16]:…”

“…Table 1 is a summary of the measured noise parameters (F 50 is the noise figure when the source impedance is equal to 50⍀) of the RF-power n-MOSFET with 400 m total gate width. The DC-bias condition is V DS ϭ 2.5 V and V GS ϭ 1.2 V. A method based on the extracted small-signal model parameters and measured noise parameters R n and ⌫ opt (that is, R n , R opt , and X opt ) has been developed to directly extract the equivalent Pucel's noise parameters P, R, and C of the RF-power n-MOSFETs [16,17]. The extracted P, R, and C can be used to calculate the noise figures of LNAs/mixers and the phase noise of oscillators [18,19], and thus is very helpful in the design of RF circuits.…”

Comparative Analysis of Different Cad Methods for Extraction of the Hemt Noise Wave Model Parameters

“…For this reason, a large number of circuit designers still uses the older and cheaper measurement setups, resulting in time-consuming noise measurements. Consequently, different transistor noise models were developed [1][2][3][4][5][6][7][8][9] in order to provide more efficient transistor noise analysis within circuit simulators. Most of the proposed transistor noise models represent the noise generated in a component using equivalent voltage and/or current sources [3,[5][6].…”

“…Consequently, different transistor noise models were developed [1][2][3][4][5][6][7][8][9] in order to provide more efficient transistor noise analysis within circuit simulators. Most of the proposed transistor noise models represent the noise generated in a component using equivalent voltage and/or current sources [3,[5][6]. However, at microwave frequencies, a wave representation of noise looks attractive since it allows the use of scattering matrices for the noise computations, leading to advantages in Computer-Aided Design (CAD) of microwave networks [2,[7][8][9][10][11][12][13][14][15][16][17][18].…”

Bias Dependant Noise Wave Modelling Procedure of Microwave Fets

“…Therefore, during the last few decades an extensive work has been carried out in the field of signal / noise modelling of microwave transistors. There is a number of different models, starting from accurate physical models which require knowledge about the numerous technological parameters [1,2], through the widely used empirical models, mostly based on equivalent circuit representation of a transistor [3][4][5][6][7][8][9][10][11][12][13][14][15], to the models based on the application of the artificial neural networks, based either on the black box modelling approach [16,17] or on a combination with the empirical models [18].…”