Design of low-power and high-speed CNTFET-based TCAM cell for future generation networks

Gangadhar, A.; Babulu, K.

doi:10.1007/s11227-021-03657-z

Cited by 4 publications

(2 citation statements)

References 20 publications

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“…With high mobility and a fabrication process compatible with various substrates, CNTFETs have demonstrated the capability to build high-speed CMOS digital circuits and microprocessors, providing as much as a 10× improvement in performance over silicon counterparts [30]. Various CNTFET-based CAMs have been proposed in the literature [30], [31], [32], [33], [34], showing that CNTFET technology can excel in terms of search power and delay as compared to conventional silicon-transistors-based CAM. Some CAM cells utilize different techniques such as topgated CNTFET (TG-CNTFET) and gate-all-around CNTFET (GAA-CNTFET) to improve performance [31], [32].…”

Section: ) Other Technology Alternatives For Associative Memories A: ...mentioning

confidence: 99%

FASTA: Revisiting Fully Associative Memories in Computer Microarchitecture

Garzón,

Hanhan,

Lanuzza

et al. 2024

IEEE Access

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Associative access is widely used in fundamental microarchitectural components, such as caches and TLBs. However, associative (or content addressable) memories (CAMs) have been traditionally considered too large, too energy-hungry, and not scalable, and therefore, have limited use in modern computer microarchitecture. This work revisits these presumptions and proposes an energy-efficient fullyassociative tag array (FASTA) architecture, based on a novel complementary CAM (CCAM) bitcell. CCAM offers a full CMOS solution for CAM, removing the need for time-and energy-consuming precharge and combining the speed of NOR CAM and low energy consumption of NAND CAM. While providing better performance and energy consumption, CCAM features a larger area compared to state-of-the-art CAM designs. We further show how FASTA can be used to construct a novel aliasing-free, energy-efficient, Very-Many-Way Associative (VMWA) cache. Circuit-level simulations using 16 nm FinFET technology show that a 128 kB FASTA-based 256-way 8-set associative cache is 28% faster and consumes 88% less energy-per-access than a same sized 8-way (256-set) SRAM based cache, while also providing aliasingfree operation. System-level evaluation performed on the Sniper simulator shows that the VMWA cache exhibits lower Misses Per Kilo Instructions (MPKI) for the majority of benchmarks. Specifically, the 256way associative cache achieves 17.3%, 11.5%, and 1.2% lower average MPKI for L1, L2, and L3 caches, respectively, compared to a 16-way associative cache. The average IPC improvement for L1, L2, and L3 caches are 1.6%, 1.4%, and 0.2%, respectively.

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Section: ) Other Technology Alternatives For Associative Memories A: ...mentioning

confidence: 99%

FASTA: Revisiting Fully Associative Memories in Computer Microarchitecture

Garzón,

Hanhan,

Lanuzza

et al. 2024

IEEE Access

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“…Electrical devices composed of carbon nanotubes, like switches, electron field emitters, field-effect transistors and sensors, have been developed steadily over the years [122][123][124]. There were many studies of CNTFETs displaying memory characteristics [125][126][127][128][129][130][131] following the initial presentation of a CNT electromechanical memory [132].…”

Section: High Speed Memorymentioning

confidence: 99%

Carbon nanotube field effect transistors: an overview of device structure, modeling, fabrication and applications

et al. 2023

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The research interest in the field of carbon nanotube field effect transistors (CNTFETs) in the post Moore era has witnessed a rapid growth primarily due to the fact that the conventional silicon based complementary metal oxide semiconductor (CMOS) devices are approaching its fundamental scaling limits. This has led to significant interest among the researchers to examine novel device technologies utilizing different materials to sustain the scaling limits of the modern day integrated circuits. Among various material alternatives, carbon nanotubes (CNTs) have been extensively investigated owing to their desirable properties such as minimal short channel effects, high mobility, and high normalized drive currents. CNTs form the most important component of CNTFETs, which are being viewed as the most feasible alternatives for the replacement of silicon transistors. In this manuscript, detailed description of the recent advances of state of the art in the field of CNTFETs with emphasis on the most broadly impactful applications for which they are being employed is presented. The future prospects of CNTFETs while considering aggressively scaled transistor technologies are also briefly discussed.

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Low Power and High-performance Ternary Content Addressable Memory using Carbon Nanotube FET

Kumar

Jain

et al. 2023

2023 IEEE 8th International Conference for Convergence in Technology (I2CT)

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Design of low-power and high-speed CNTFET-based TCAM cell for future generation networks

Cited by 4 publications

References 20 publications

FASTA: Revisiting Fully Associative Memories in Computer Microarchitecture

FASTA: Revisiting Fully Associative Memories in Computer Microarchitecture

Carbon nanotube field effect transistors: an overview of device structure, modeling, fabrication and applications

Low Power and High-performance Ternary Content Addressable Memory using Carbon Nanotube FET

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