2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017)
DOI: 10.1109/mwsym.2000.860921
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Design of low actuation voltage RF MEMS switch

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Cited by 181 publications
(117 citation statements)
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“…Pacheco et al [29] demonstrated a 9 V electrostatically actuated switch, having a five-meander arm at each of the four corners of the capacitive membrane bridge. Here, the capacitance ratio ¼ 2.5 pF/47 fF ¼ 43; insertion loss ¼ 0.16 dB at 40 GHz; isolation ¼ 26 dB at 40 GHz; and self-actuation occurs with a mean RF power of 6.6 W. A microphotograph of a similar switch is shown in Fig.…”
Section: Switchesmentioning
confidence: 99%
“…Pacheco et al [29] demonstrated a 9 V electrostatically actuated switch, having a five-meander arm at each of the four corners of the capacitive membrane bridge. Here, the capacitance ratio ¼ 2.5 pF/47 fF ¼ 43; insertion loss ¼ 0.16 dB at 40 GHz; isolation ¼ 26 dB at 40 GHz; and self-actuation occurs with a mean RF power of 6.6 W. A microphotograph of a similar switch is shown in Fig.…”
Section: Switchesmentioning
confidence: 99%
“…The device parameters derived from the equivalent model of a MEMS switch reported in [12], alongside the capacitance ratio of the switch in both states examined in [13,14] were optimized with fabrication limitations and project objectives The design of the RF MEMS switch and varactor begins with determining the dimensions of the CPW transmission line, i.e. the gap G and signal line width S, which play an important roles in the devices' signal loss and bandwidth response and determine the switch and varactor bridge length.…”
Section: Mems Switches and Varactor Designmentioning
confidence: 99%
“…An approximate formula to calculate the actuation or pull-in voltage for these metal switches is given by [6,7]:…”
Section: Fig 2 Measured Actuation Voltages For Number Of Switches Agmentioning
confidence: 99%