2006 IEEE MTT-S International Microwave Symposium Digest 2006
DOI: 10.1109/mwsym.2006.249434
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Design of Ku-Band Filter based on Substrate-Integrated Circular Cavities (SICCs)

Abstract: International audienceThis paper proposes several topologies of filters based on substrate integrated circular cavities (SICCs). SICC works on TM modes and the benefits of this technology are mainly an increased quality factor and a better design flexibility. Filters are made from cylindrical cavities integrated into a planar substrate and are fed by microstrip lines through coupling slots. Cavities are inter-coupled by irises. One-order, second-order and third-order filters are presented. Preliminary measurem… Show more

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Cited by 37 publications
(21 citation statements)
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“…In fact, even if the structures presented in this paper are not Figure 6. Scattering parameters of a single cavity circular filter, as in [21], h = 0.380 mm, w = 3.8 mm, wio = 1.683 mm, a = 0.2 mm, r = 2.4 mm, p = 0.7 mm, ε r = 9.9, tan δ = 0.001, σ = 5.8 * 10 7 S/m. Figure 7.…”
Section: Resultsmentioning
confidence: 99%
“…In fact, even if the structures presented in this paper are not Figure 6. Scattering parameters of a single cavity circular filter, as in [21], h = 0.380 mm, w = 3.8 mm, wio = 1.683 mm, a = 0.2 mm, r = 2.4 mm, p = 0.7 mm, ε r = 9.9, tan δ = 0.001, σ = 5.8 * 10 7 S/m. Figure 7.…”
Section: Resultsmentioning
confidence: 99%
“…The distance between centre line of the aperture and circle centre d; the length of the stub l (calculated from centre line of the aperture); /4), h 0 = 2 mm, w 0 = 0.2 mm, R 0 = 1.6 mm, the transition structure was modeled with solid wall firstly and then the solid wall was replaced by vias-array under the guidelines of references [8][9][10][11], Some applications of SICC can be found in references [12][13][14], some important design guidelines can be found in [15][16][17][18][19]. The radius of the cavity R and the gap location d were two key parameters in designing of the transition structure; the R can be calculated with (3), and the parameter d was approximately λ g /4 ; the width of the microstrip lines were calculated to guarantee a 50 Ω impedance.…”
Section: Design Of the Sicc Transitionmentioning
confidence: 99%
“…Compact RF/microwave filters with low profile and high performance are required in many communication systems. For such a demand, some new planar waveguide structures called substrate integrated waveguides (SIW) have been proposed [1][2][3][4][5][6][7][8], and applied to develop many high-quality microwave wave components. SIW is a new type of dielectric-filled waveguide that is synthesized in a planar dielectric substrate with metal vias.…”
Section: Introductionmentioning
confidence: 99%
“…However, the substrate integrated waveguide circular cavity (SICC) filter is also a good choice in the design of high performance filter. It not only have the same attractiveness as classical SIW filters in terms of planar compatibility, but also presents a higher quality factor, lower loss, design flexibility [4][5][6][7]. In [4], a planar diplexer is developed based on the complementary SICCs.…”
Section: Introductionmentioning
confidence: 99%
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