Design of ITO/SiO2/TiO2 distributed Bragg reflectors as a p-type electrode in GaN-based flip-chip light emitting diodes

Lee, Gil Jun; Hong, In Yeol; Kim, Tae Kyoung; Park, Hyun Jung; Oh, Seung Kyu; Cha, Yu-Jung; Park, Min Joo; Choi, Kyoung Jin; Kwak, Joon Seop

doi:10.1016/j.apsusc.2017.10.144

Cited by 14 publications

(15 citation statements)

References 25 publications

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“…For DBR mirrors, the reflectance should depend on the number of layers of DBR. For example, figure 11 shows the reflectance in terms of wavelength and incident angle of DBR with different layers [30].…”

Section: Reflector 2: Incorporating the Dbr Mirror Into The Led Chipmentioning

confidence: 99%

Developments for enhancing the luminous intensity of LEDs by optimizing their structures

Liu

2022

J. Phys.: Conf. Ser.

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The brightness enhancement of the light emitting diode (LED) can satisfy the increasing demands of illumination of human beings. However, the low-rate recombination of electron-hole pairs, isotropic nature of the spontaneous emission as well as the large refractive index of the materials used for LEDs usually limits the performance of the light output. Therefore, it is necessary to address these challenges, trying to enlarge the light output power with high optoelectronic efficiency. This review will analysis the factors that can influence the behaviour of the LEDs and the method to overcome these issues by optimizing the structures of epilayers and LED chips.

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Section: Reflector 2: Incorporating the Dbr Mirror Into The Led Chipmentioning

confidence: 99%

Developments for enhancing the luminous intensity of LEDs by optimizing their structures

Liu

2022

J. Phys.: Conf. Ser.

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“…Flip-chip LEDs (FCLEDs) exhibit excellent heat dissipation performance and high light efficiency, and have been attracting great attention in the field of high-power LEDs. Forming a p-type ohmic contact electrode with high reflectance and low ohmic contact resistance is the key to realize high-efficiency FCLEDs [5][6][7]. However, high power LED lighting generally requires high current density and vertical light extraction efficiency owing to the dense packaging [8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Improving the External Quantum Efficiency of High-Power GaN-Based Flip-Chip LEDs by Using Sidewall Composite Reflective Micro Structure

Fan²,

Sun

et al. 2021

Micromachines

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For high-power applications, it is important to improve the light extraction efficiency and light output of the vertical direction of LEDs. Flip-chip LEDs (FCLEDs) with an Ag/SiO2/distributed Bragg reflector/SiO2 composite reflection micro structure (CRS) were fabricated. Compared with the normal Ag-based FCLEDs, the light output power of the CRS-FCLEDs was increased by 6.3% at an operational current of 1500 mA, with the corresponding external quantum efficiency improved by 6.0%. Further investigation proved that the CRS structure exhibited higher reflectance compared with the commonly used Ag-mirror reflective structure, which originates from the increased reflective area in the sidewall and partial area of the n-GaN contact orifices. It exhibited markedly smaller optical degradation and thus higher device reliability as compared to normal Ag-based FCLED. Moreover, the light emission intensity distributions and far-field angular light emission measurements show that the CRS-FCLED has a strengthened light output in the vertical direction, which shows great potential for applications in high-power fields, such as headlamps for automobiles.

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“…For this purpose, indium‐tin‐oxide (ITO) films, which are transparent to visible and infrared light, along with being highly conductive, have been used in many optoelectronic devices. [ 10–16 ]…”

Section: Introductionmentioning

confidence: 99%

Indium Tin Oxide with High Carrier‐Collection Capacity and Radiation Resistance for GaInP Solar Cell

Dai

Long

Sun

et al. 2021

Physica Status Solidi (a)

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The crystal structure, light transmittance, and contact resistivity of transparent conducting indium-tin-oxide (ITO) films for a III-V solar cell are studied. The optical transparency of ITO can reach 96% under appropriate annealing conditions. ITO and n þ -GaAs can form Ohmic contacts having a lower contact resistance than those formed with ITO and n þ -GaInP. A specially designed solar cell structure is fabricated to grow the ITO film as the front electrode and thus prevent oxidation of the AlInP window layer. Three different GaInP solar cells with pure ITO and ITO/metal grid electrode structures are designed and compared. The results indicate that the ITO electrode has good carrier-collection ability. After irradiation with 1 MeV energy electrons with an electron fluence of 1 Â 10 15 e cm À2 , the remaining factor of the GaInP solar cells with a pure ITO electrode is %98%. The results indicate that ITO films have significant application potential in space solar cell manufacturing.

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Design of ITO/SiO2/TiO2 distributed Bragg reflectors as a p-type electrode in GaN-based flip-chip light emitting diodes

Cited by 14 publications

References 25 publications

Developments for enhancing the luminous intensity of LEDs by optimizing their structures

Developments for enhancing the luminous intensity of LEDs by optimizing their structures

Improving the External Quantum Efficiency of High-Power GaN-Based Flip-Chip LEDs by Using Sidewall Composite Reflective Micro Structure

Indium Tin Oxide with High Carrier‐Collection Capacity and Radiation Resistance for GaInP Solar Cell

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