Design of high power S-band GaN MMIC power amplifiers for WiMAX applications

Abstract

This paper reports two different S band GaN MMIC PA designs for WiMAX applications. First PA has a 42.6 dBm output power with a 55%PAE @ 3.5 GHz and 16 dB small signal gain in the 3.2-3.8 GHz frequency range. When two of these MMICs were combined by using off-chip Lange Couplers, 45.3 dBm output power with a 45%PAE @3.5Ghz and 16 dB small signal gain were obtained with less than 0.2 dB gain ripple in the 3.3-3.8 GHz frequency range.

High power K-band GaN on SiC CPW monolithic power amplifier

“…Due to its material properties such as wide band gap, high breakdown field, high saturated drift velocity and high thermal conductivity, GaN HEMT technology is very attractive for radar, mobile communication and satellite communication applications [1,6].…”