Design of High Efficiency Multi-GHz SiGe HBT Electro-Optic Modulator

Deng, Shengling; Huang, Z. Rena; McDonald, J. F.

doi:10.1364/oe.17.013425

Cited by 13 publications

(4 citation statements)

References 28 publications

(29 reference statements)

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“…Due to tight optical mode confinement in the HBT waveguide, the optical mode profile has almost negligible change as the carrier density varies with the bias voltage at V BE . This is apparently different from large dimension HBT waveguide [2]. The relatively complex HBT waveguide structure poses a concern of possible polarization mixing which would cause extinction ratio penalty as the optical wave travels along the waveguide.…”

Section: Simulation Results and Discussionmentioning

confidence: 96%

High-speed electro-absorption modulator based on sige HBT

Huang

Deng

2011

2011 IEEE Avionics, Fiber- Optics and Photonics Technology Conference

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Section: Simulation Results and Discussionmentioning

confidence: 96%

High-speed electro-absorption modulator based on sige HBT

Huang

Deng

2011

2011 IEEE Avionics, Fiber- Optics and Photonics Technology Conference

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“…When the SiGe waveguide is implemented in SOI, the effective refractive index of the waveguide layer can be increased, which means that device sizes and losses can be decreased. The size of the waveguide also becomes smaller and smaller with decreasing feature size of the electronic device, and the cross-section dimension of the SiGe optical waveguide has been reached at a micro-nano level [8,9]. The development of the SiGe heterostructure devices has resulted in the SiGe/Si heterojunction optical waveguide having no doping, and its loss being very low [10].…”

Section: Introductionmentioning

confidence: 99%

Research into Two Photonic-Integrated Waveguides Based on SiGe Material

Feng

Xue

2020

Materials

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SiGe (Silicon Germanium) is a common semiconductor material with many excellent properties, and many photonic-integrated devices are designed and fabricated with SiGe material. In this paper, two photonic-integrated SiGe waveguides are researched, namely the SiGe-SOI (Silicon Germanium-Silicon-On-Insulator) waveguide and the SiGe-OI (Silicon Germanium-On-Insulator) waveguide. In order to verify which structure has the better waveguide performance, two waveguide structures are built, and the effective refractive indexes and the loss characteristics of the two waveguides are analyzed and compared. By simulation, the SiGe-OI optical waveguide has better losses characteristics at a wavelength of 1.55 μm. Finally, SiGe-OI and SiGe-SOI waveguides are fabricated and tested to verify the correctness of theoretical analysis, and the experimental results show that the transmission losses of the SiGe-OI waveguide are respectively decreased by 36.6% and 28.3% at 400 nm and 600 nm waveguide width in comparison with the SiGe-SOI waveguide. The results also show that the SiGe-OI waveguide has better loss characteristics than those of the SiGe-SOI waveguide at the low Ge content.

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“…Numerous photonic devices utilize integrated Mach-Zehnder interferometer (MZI) to achieve phase-to-intensity conversion, such as electro-optic (EO) modulators [1][2][3] and bio-sensors [4,5]. For a fixed voltage swing, the waveguide length L π for which a π phase-difference occurs between the two MZI arms can be used to characterize the device efficiency [6]. Incorporation of slow light effects in the MZI is a practical and effective way to improve device efficiency and reduce power consumption.…”

Section: Introductionmentioning

confidence: 99%

Design and analysis of transmission enhanced multi-segment grating in MZI configuration for slow light applications

Deng¹,

Huang²

2011

Opt. Express

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This paper proposes to use slow light effects near the Brillouin zone band edge of one-dimensional gratings for reducing the size of integrated electro-optic (EO) modulators. The gratings are built within the arms of a Mach-Zehnder Interferometer (MZI) for intensity modulation. To overcome the inherent high reflection and low extinction ratio, we introduce various multi-segment grating designs. We use coupled-mode theory and derive transfer matrices to analyze the spectral transmittance and phase delay of each arm of the interferometer. Calculations show that a size-reduction of a factor of 2 or more can be achieved at λ=1.574 µm with an insertion loss of 0.17 dB and an amplitude modulation extinction ratio of 18.84dB. The simulated structure is based on a Si slab-waveguide 0.2 μm thick with 30 nm deep grating groves on SiO(2)> substrate.

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Design of High Efficiency Multi-GHz SiGe HBT Electro-Optic Modulator

Cited by 13 publications

References 28 publications

High-speed electro-absorption modulator based on sige HBT

High-speed electro-absorption modulator based on sige HBT

Research into Two Photonic-Integrated Waveguides Based on SiGe Material

Design and analysis of transmission enhanced multi-segment grating in MZI configuration for slow light applications

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