Design of High-Brightness Tapered Lasers at 1060 nm Based on an Asymmetric Al-free Active Region Structure

Odriozola, H.; Tijero, J. M. G.; Esquivias, I.; Borruel, L.; Martín-Mínguez, A.; Michel, N.; Calligaro, M.; Lecomte, M.; Parillaud, O.; Krakowski, M.

doi:10.1109/ipgc.2008.4781514

Cited by 2 publications

(3 citation statements)

References 6 publications

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“…3a) shows the experimental and simulated Power-Current characteristics of 4º tapered lasers based on the s-SQW and a-SQW designs. Those simulation parameters depending on material quality (scattering losses and trap density) or non properly known (refractive index of InGaAsP at 1060 nm) were previously estimated by comparing 1D simulations with experiments in Broad Area lasers 18 . As it can be seen in Fig.…”

Section: Tapered Lasers Based On Asymmetric Epitaxial Structuresmentioning

confidence: 99%

Simulation of high brightness tapered lasers

Esquivias

Odriozola

Tijero

et al. 2010

Novel in-Plane Semiconductor Lasers IX

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Tapered semiconductor lasers have demonstrated both high power and good beam quality, and are of primary interest for those applications demanding high brightness optical sources. The complex non-linear interaction between the optical field and the active material requires accurate numerical simulations to improve the device design and to understand the underlying physics. In this work we present results on the design and simulation of tapered lasers by means of a Quasi-3D steady-state single-frequency model. The results are compared with experiments on Al-free active region devices emitting at 1060 nm. The performance of devices based on symmetric and asymmetric epitaxial designs is compared and the influence of the design on the beam properties is analyzed. The role of thermal effects on the beam properties is experimentally characterized and analyzed by means of the numerical simulations. Tapered lasers with separate electrical contacts in the straight and tapered sections, based on symmetrical and asymmetrical epitaxial designs are also presented and analyzed.

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Section: Tapered Lasers Based On Asymmetric Epitaxial Structuresmentioning

confidence: 99%

Simulation of high brightness tapered lasers

Esquivias

Odriozola

Tijero

et al. 2010

Novel in-Plane Semiconductor Lasers IX

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“…This difference is mainly explained by thermal effects caused by the smaller surface of the 3 mm lasers. On both 6 mm lasers, the improvement in the beam quality is explained by the use of an asymmetric structure that prevents effects like carrier lensing and self-focusing [7] In table 5 we have summarized the principal parameters like epitaxial structure, total length, front facet (FF) reflectivity and the taper angle with the principal observed results in the static and dynamic regime. The first group of results are the best beam propagation ( 2 ² / 1 e M defined in [EQ 9]) ratio and the corresponding power.…”

Section: Vi-synthesis Of the Main Resultsmentioning

confidence: 99%

“…This structure is interesting because it enables the brightness improvement of tapered lasers [7] Symmetric Structure…”

Section: I-laser Stucturementioning

confidence: 99%

Very high modulation efficiency two-sections tapered laser diode at 1060nm for free space optical communications

Ruiz

Michel

Calligaro

et al. 2011

Novel in-Plane Semiconductor Lasers X

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High-power (more than 500 mW) and high-speed (more than 1 Gbps) tapered lasers at 1060 nm are required in freespace optical communications and (at lower frequencies of around 100 MHz) display applications for frequency doubling to the green. On a 3 mm long tapered laser, we have obtained an open eye diagram at 1 Gbps, together with a high extinction ratio of 11 dB, an optical modulation amplitude of 530 mW, and a high modulation efficiency of 13 W/A. On a 4 mm-long tapered laser, we have obtained an open eye diagram at 700 Mbps, together with a high extinction ratio of 19 dB, a high optical modulation amplitude of 1.6 W, and a very high modulation efficiency of 19 W/A. On a 6 mm-long tapered laser, we have obtained a very high power of 5W CW and a very high static modulation efficiency of 59.8 W/A.

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Design of High-Brightness Tapered Lasers at 1060 nm Based on an Asymmetric Al-free Active Region Structure

Cited by 2 publications

References 6 publications

Simulation of high brightness tapered lasers

Simulation of high brightness tapered lasers

Very high modulation efficiency two-sections tapered laser diode at 1060nm for free space optical communications

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