Design of efficient mono-aminosilane precursors for atomic layer deposition of SiO<sub>2</sub> thin films

Huang, Liang; Han, Bo; Fan, Maohong; Cheng, Hansong

doi:10.1039/c7ra02301d

Cited by 21 publications

(18 citation statements)

References 50 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“… 34 These theoretical results were confirmed experimentally by Peña et al who employed infrared adsorption spectroscopy to study DSBAS adsorption on −OH sites and demonstrated the formation of −SiH 3 species on the surface after the precursor exposure. 35 , 36 …”

Section: Concise Overview On the Ald Reaction Mechanism Of Sio 2 Using Aminosilane Precursorsmentioning

confidence: 99%

Atmospheric-Pressure Plasma-Enhanced Spatial ALD of SiO₂ Studied by Gas-Phase Infrared and Optical Emission Spectroscopy

et al. 2021

View full text Add to dashboard Cite

An atmospheric-pressure plasma-enhanced spatial atomic layer deposition (PE-s-ALD) process for SiO2 using bisdiethylaminosilane (BDEAS, SiH2[NEt2]2) and O2 plasma is reported along with an investigation of its underlying growth mechanism. Within the temperature range of 100–250 °C, the process demonstrates self-limiting growth with a growth per cycle (GPC) between 0.12 and 0.14 nm and SiO2 films exhibiting material properties on par with those reported for low-pressure PEALD. Gas-phase infrared spectroscopy on the reactant exhaust gases and optical emission spectroscopy (OES) on the plasma region are used to identify the species that are involved in the ALD process. Based on the identified species, we propose a reaction mechanism where BDEAS molecules adsorb on −OH surface sites through the exchange of one of the amine ligands upon desorption of diethylamine (DEA). The remaining amine ligand is removed through combustion reactions activated by the O2 plasma species leading to the release of H2O, CO2, and CO in addition to products such as N2O, NO2, and CH-containing species. These volatile species can undergo further gas-phase reactions in the plasma as indicated by the observation of OH*, CN*, and NH* excited fragments in OES. Furthermore, the infrared analysis of the precursor exhaust gas indicated the release of CO2 during precursor adsorption. Moreover, this analysis has allowed the quantification of the precursor depletion yielding values between 10 and 50% depending on the processing parameters. Besides providing insights into the chemistry of atmospheric-pressure PE-s-ALD of SiO2, our results demonstrate that infrared spectroscopy performed on exhaust gases is a valuable approach to quantify relevant process parameters, which can ultimately help evaluate and improve process performance.

show abstract

Section: Concise Overview On the Ald Reaction Mechanism Of Sio 2 Using Aminosilane Precursorsmentioning

confidence: 99%

Atmospheric-Pressure Plasma-Enhanced Spatial ALD of SiO₂ Studied by Gas-Phase Infrared and Optical Emission Spectroscopy

et al. 2021

View full text Add to dashboard Cite

show abstract

“…A recent report used density functional theory to model the dissociative chemisorption of silicon nitride precursors (mono(alkylamino)silanes) on silicon dioxide to determine the effect of different aminoalkyl ligands. 118 Adsorption energies, driven primarily by hydrogen bonding did not vary significantly with size of aminoalkyl ligands, however, a large variation in the reaction energy barriers was observed with ligand size due to transition state interactions and steric effects. The ALD window for suitable thin film growth was found to be widest for diisopropylaminosilane (DIPAS) and dipropylaminosilane (DPAS) precursors (∼100…”

Section: Atomic Layer Deposition (Ald)mentioning

confidence: 99%

Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: Trends in Deposition Techniques and Related Applications

Kaloyeros

Jové

Goff

et al. 2017

ECS J. Solid State Sci. Technol.

127

View full text Add to dashboard Cite

This article provides an overview of the state-of-the-art chemistry and processing technologies for silicon nitride and silicon nitride-rich films, i.e., silicon nitride with C inclusion, both in hydrogenated (SiNx:H and SiNx:H(C)) and non-hydrogenated (SiNx and SiNx(C)) forms. The emphasis is on emerging trends and innovations in these SiNx material system technologies, with focus on Si and N source chemistries and thin film growth processes, including their primary effects on resulting film properties. It also illustrates that SiNx and its SiNx(C) derivative are the focus of an ever-growing research and manufacturing interest and that their potential usages are expanding into new technological areas.

show abstract

“…First, we investigated the growth per cycle (GPC) of ALD SiO 2 films at 100 °C, which is the lowest temperature for its ALD window, as a function of DIPAS and O 3 exposure times (Figure S2, Supporting Information). [ 36 ] Optimized exposure times to DIPAS and O 3 were determined to be 3 and 6 s, respectively, indicating a self‐saturated GPC of ≈0.82 Å/cycle. N 2 purging time following both DIPAS exposure and O 3 exposure was maintained at 60 s, which we found was sufficient to avoid unwanted chemical reactions between the precursor and co‐reactant.…”

Section: Resultsmentioning

confidence: 99%

Inherently Area‐Selective Atomic Layer Deposition of SiO₂ Thin Films to Confer Oxide Versus Nitride Selectivity

Lee

et al. 2021

Adv Funct Materials

View full text Add to dashboard Cite

Area‐selective atomic layer deposition (AS‐ALD) offers tremendous advantages in comparison with conventional top‐down patterning processes that atomic‐level selective deposition can achieve in a bottom‐up fashion on pre‐defined areas in multi‐dimensional structures. In this work, a method for exploiting substrate‐dependent selectivity of aminosilane precursors for oxides versus nitrides through chemo‐selective adsorption is reported. For this purpose, AS‐ALD of SiO2 thin films on SiO2 substrates rather than on SiN substrates are investigated. Theoretical screening using density functional theory (DFT) calculations are performed to identify Si precursors that maximize adsorption selectivity; results indicate that di(isopropylamino)silane (DIPAS) has the potential to function as a highly chemo‐selective precursor. Application of this precursor to SiN and SiO2 substrates result in inherent deposition selectivity of ≈4 nm without the aid of surface inhibitors. Furthermore, deposition selectivity is enhanced using an ALD‐etch supercycle in which an etching step inserts periodically after a certain number of ALD SiO2 cycles. Thereby, enlarged deposition selectivity greater than ≈10 nm is successfully achieved on both blanket‐ and SiO2/SiN‐patterned substrates. Finally, area‐selective SiO2 thin films over 4–5 nm are demonstrated inside 3D nanostructure. This approach for performing inherent AS‐ALD expands the potential utility of bottom‐up nanofabrication techniques for next‐generation nanoelectronic applications.

show abstract

Design of efficient mono-aminosilane precursors for atomic layer deposition of SiO₂ thin films

Abstract: The suitability of six mono(alkylamino)silane precursors for growing SiO2 films via ALD is assessed with DFT calculations.

Cited by 21 publications

References 50 publications

Atmospheric-Pressure Plasma-Enhanced Spatial ALD of SiO₂ Studied by Gas-Phase Infrared and Optical Emission Spectroscopy

Atmospheric-Pressure Plasma-Enhanced Spatial ALD of SiO₂ Studied by Gas-Phase Infrared and Optical Emission Spectroscopy

Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: Trends in Deposition Techniques and Related Applications

Inherently Area‐Selective Atomic Layer Deposition of SiO₂ Thin Films to Confer Oxide Versus Nitride Selectivity

Contact Info

Product

Resources

About

Design of efficient mono-aminosilane precursors for atomic layer deposition of SiO2 thin films

Abstract: The suitability of six mono(alkylamino)silane precursors for growing SiO2 films via ALD is assessed with DFT calculations.

Cited by 21 publications

References 50 publications

Atmospheric-Pressure Plasma-Enhanced Spatial ALD of SiO2 Studied by Gas-Phase Infrared and Optical Emission Spectroscopy

Atmospheric-Pressure Plasma-Enhanced Spatial ALD of SiO2 Studied by Gas-Phase Infrared and Optical Emission Spectroscopy

Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: Trends in Deposition Techniques and Related Applications

Inherently Area‐Selective Atomic Layer Deposition of SiO2 Thin Films to Confer Oxide Versus Nitride Selectivity

Contact Info

Product

Resources

About

Design of efficient mono-aminosilane precursors for atomic layer deposition of SiO₂ thin films

Atmospheric-Pressure Plasma-Enhanced Spatial ALD of SiO₂ Studied by Gas-Phase Infrared and Optical Emission Spectroscopy

Atmospheric-Pressure Plasma-Enhanced Spatial ALD of SiO₂ Studied by Gas-Phase Infrared and Optical Emission Spectroscopy

Inherently Area‐Selective Atomic Layer Deposition of SiO₂ Thin Films to Confer Oxide Versus Nitride Selectivity