Design of edge termination on non-uniform 100-V super-junction trench power MOSFET

Abstract

A design methodology for the edge termination is proposed to achieve the same breakdown voltage of the non-uniform super-junction (SJ) trench metal-oxide semiconductor field-effect transistor (TMOSFET) cell structure. A simple analytical solution for the effect of charge imbalance on the termination region is suggested, and it is satisfied with the simulation of potential distribution. The doping concentration decreases linearly in the vertical direction from the N drift region at the bottom to the channel at the top. The structure modeling and the characteristic analyses for potential distribution and electric field are simulated by using of the SILVACO TCAD 2D device simulator, Atlas. As a result, the breakdown voltage of 132 V is successfully achieved at the edge termination of non-uniform SJ TMOSFET, which has the better performance than the conventional structure in the breakdown voltage.