Design of Cmos Quadrature Vco Using on-Chip Trans-Directional Couplers

Shie, Ching-Ian; Cheng, Jui‐Ching; Chou, Sheng-Chun; Chiang, and Yi-Chyun

doi:10.2528/pier10053002

Cited by 19 publications

(14 citation statements)

References 28 publications

(19 reference statements)

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“…The CMOS is the most popular device for monolithic microwave integrated circuits (MMIC) [1][2][3][4][5][6]. Most analog circuits, including digital circuits and RF circuits, are designed using the CMOS process.…”

Section: Introductionmentioning

confidence: 99%

X-Band CMOS Power Amplifier Using Mode-Locking Method For Sensor Applications

Lee

Park

2012

Journal of Electromagnetic Waves and Applications

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An X-band CMOS power amplifier using a mode-locking method for sensor applications is designed with a TSMC 0.13-µm RF CMOS process. The cascode structure is adapted to remove the reliability problems between the drain and gate voltages of the NMOS. Additionally, the mode-locking method is used to improve the efficiency and gain of the amplifier. We proposed the method to adapt the mode-locking topology to the cascode structure. The measured power added efficiency is 27%, while the saturated output power is 14 dBm at an operation frequency of 8.9 GHz. The designed chip size is 700 by 550 µm 2 .

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Section: Introductionmentioning

confidence: 99%

X-Band CMOS Power Amplifier Using Mode-Locking Method For Sensor Applications

Lee

Park

2012

Journal of Electromagnetic Waves and Applications

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“…Figure 2 shows the schematics of the differential cross-coupled LC-VCO [4][5][6]. Since the g m of CMOS and HBT devices are both large enough at the oscillator frequency of 21 GHz in 0.13 µm processes; CMOS devices have the advantages of lower saturation voltage (V sat ) and better linearity over HBTs, thus NMOS is more suitable for supplying sufficient output voltage swing to drive the next stage.…”

Section: Voltage Controlled Oscillatormentioning

confidence: 99%

A Q-Band FREQUENCY SYNTHESIZER IN 0.13 ΜM SIGE BICMOS

Li¹,

Xiong²,

He³

et al. 2014

PIER C

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Abstract-In this paper, a 42 GHz frequency synthesizer fabricated with 0.13 µm SiGe BiCMOS technology is presented, which consists of an integer-N fourth-order type-II phase locked loop (PLL) with a LC tank VCO and a frequency doubler. The core PLL has three-stage current mode logic (CML) and five stage true single phase clock (TSPC) logic in the frequency divider. Meanwhile, a novel balanced common-base structure is used in the frequency doubler design to widen the bandwidth and improve the fundamental rejection. The doubler shows a 41% fractional 3 dB bandwidths with a fundamental rejection better than 25.7 dB. The synthesizer has a maximum output power of 0 dBm with a DC power consumption of 60 mW. The worst phase noise at 100 kHz, 1 MHz and 10 MHz offset frequencies from the carrier is −71 dBc/Hz, −83 dBc/Hz and −102.4 dBc/Hz, respectively.

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“…Table 1 lists the comparison of VCO performance. The FOM performance is better than the QVCO in [19].…”

Section: Measurement Resultsmentioning

confidence: 98%

Quadrature Vco Formed With Two Colpitts Vco Coupled via an Lc-Ring Resonator

Jang¹,

Lin²,

Chang³

et al. 2011

PIER C

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Abstract-This paper presents a new quadrature voltage-controlled oscillator (QVCO), which consists of two p-core Colpitts cross-coupled voltage-controlled oscillators (VCOs) with an LC ring resonator to provide the quadrature outputs. The proposed CMOS QVCO has been implemented with the TSMC 0.18 µm CMOS technology and the die area is 0.478×0.82 mm 2 . At the supply voltage of 1.5 V, the total power consumption is 20.4 mW. The free-running frequency of the QVCO is tunable from 9.69 GHz to 10.52 GHz as the tuning voltage is varied from 0.0 V to 2 V. The measured phase noise at 1 MHz frequency offset is −122.41 dBc/Hz at the oscillation frequency of 10.52 GHz and the figure of merit (FOM) of the proposed QVCO is −189.7 dBc/Hz.

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Design of Cmos Quadrature Vco Using on-Chip Trans-Directional Couplers

Cited by 19 publications

References 28 publications

X-Band CMOS Power Amplifier Using Mode-Locking Method For Sensor Applications

X-Band CMOS Power Amplifier Using Mode-Locking Method For Sensor Applications

A Q-Band FREQUENCY SYNTHESIZER IN 0.13 ΜM SIGE BICMOS

Quadrature Vco Formed With Two Colpitts Vco Coupled via an Lc-Ring Resonator

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