Design of Class DE Amplifier with Nonlinear Shunt Capacitances for Any Output Q

Implementation of class‐E/F3 power amplifiers based on the variations of the MOSFET grading coefficient, built‐in potential and output capacitance along with their roles in MOSFET selectivity

“…Up to now many investigations on the performance of power amplifiers have been carried out 1–26 . As an example, a class‐E amplifier with a simple topology can provide a high efficiency, as presented in Sokal and Sokal 1 .…”

“…Unfortunately, the class‐E amplifier has a high switch‐voltage peak, which leads to a restriction of the class‐E mode with high output power. To overcome this problem, different techniques have been proposed 11–21 . In fact, these methods apply some additional parts to the class‐E structure to modify its performance.…”

“…To overcome this problem, different techniques have been proposed. [11][12][13][14][15][16][17][18][19][20][21] In fact, these methods apply some additional parts to the class-E structure to modify its performance. Employing Zener diode and using a transformer with a diode in the class-E amplifier are some of these techniques, as reported in Suetsugu and Kazimierczuk, 11,12 respectively.…”

“…In a class-DE amplifier, 13 which is a combination of the introduced class-E amplifier and the class-D amplifier, 14,15 the switch-device stress is suppressed and the switch-voltage peak becomes equal to the input DC supply of the amplifier. Similar to the introduced class-E, the class-DE amplifier considering its MOSFETs nonlinear parasitic capacitances has been analyzed in Sekiya et al 16 In addition to the parasitic capacitances, the impacts of the grading coefficient and the output quality factor have been taken into account in Sekiya et al 17 and Ezawa et al, 18 respectively. In previous studies, [19][20][21][22] a class-F or a class-F À1 is utilized in the resonance circuit of the class-E structure to modify the class-E drawbacks.…”