Design of Bubble Device Elements Employing Ion-Implanted Propagation Patterns

Nelson, T. J.; Wolfe, R.; Blank, S. L.; Bonyhard, P.; Johnson, William A.; Baburske, Roman; Vella−Coleiro, G. P.

doi:10.1002/j.1538-7305.1980.tb03004.x

Cited by 32 publications

(1 citation statement)

References 11 publications

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“…The existence of the charged walls, shown in figure 12, explains why the bubble domain can be held and propagated so well by an ion-implanted pattern. Good devices were soon being made using these patterns (Lin et al 1977, Nelson et al 1980 even though the exact origin of the easy direction of magnetisation, which appears around the circumference of the track, was still obscure. A possible solution to this problem was suggested independently by Backera et ai (1980) and Hidaka and Matsutera (1981) who considered the implications of the way the stress in the ion-implanted layer would have to vary in order to satisfy the elastic boundary conditions at the edge of the implanted region.…”

Section: Propagation Tracks Made By Means Of Ion Implantationmentioning

confidence: 99%

Magnetic bubble domain devices

O'Dell

1986

Rep. Prog. Phys.

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The invention of a number of interesting magnetic bubble domain devices over the past eighteen years, for computer memory, data-flow data processing and optical image processing, has brought many new and interesting problems to the attention of physicists. These problems, in materials, particularly crystal growth, in magnetic domain dynamics, in the physics of ion implantation, in complex magnetic field calculations and in magneto-optics are reviewed and discussed. It is concluded that we have here a particularly significant example of the interaction between technology and science.

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Section: Propagation Tracks Made By Means Of Ion Implantationmentioning

confidence: 99%

Magnetic bubble domain devices

O'Dell

1986

Rep. Prog. Phys.

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Experimental Ion-Implanted Bubble Memory Device With 16-μm²Cell

Nelson

Muehlner

Rana

et al. 1984

At&T Bell Laboratories Technical Journal

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This paper describes a 4‐μm‐period (16 μm2/bit) magnetic bubble device based on ion‐implanted propagation patterns. Single‐layer LaSmLuBiGa—IG films were implanted with Ne+ and He+ ions using densified photoresist masking patterns. Coarse (three eighths of a period) minimum features were used in the Permalloy and Al‐Cu levels. A 21‐Oe overlap bias range was obtained for generation, propagation, transfer, and detection at 55‐Oe drive. Generation and detection were demonstrated to have a 39‐Oe bias range at 44‐Oe drive, and a 39‐Oe bias range for minor‐loop propagation was obtained at ≥33‐Oe drive.

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