Experimental Ion-Implanted Bubble Memory Device With 16-μm²Cell

Abstract

This paper describes a 4‐μm‐period (16 μm2/bit) magnetic bubble device based on ion‐implanted propagation patterns. Single‐layer LaSmLuBiGa—IG films were implanted with Ne+ and He+ ions using densified photoresist masking patterns. Coarse (three eighths of a period) minimum features were used in the Permalloy and Al‐Cu levels. A 21‐Oe overlap bias range was obtained for generation, propagation, transfer, and detection at 55‐Oe drive. Generation and detection were demonstrated to have a 39‐Oe bias range at 44‐Oe drive, and a 39‐Oe bias range for minor‐loop propagation was obtained at ≥33‐Oe drive.