2007
DOI: 10.1007/s00542-006-0347-0
|View full text |Cite
|
Sign up to set email alerts
|

Design of bossed silicon membranes for high sensitivity microphone applications

Abstract: This paper deals with the design optimization of new high sensitivity microphones in SOI technology for gas sensing applications. A novel geometry of bossed silicon membranes used as mechanical transducer has been studied by Finite Element Modelling. Device fabrication is achieved from SOI substrates through deep backside anisotropic etching and shallow front side RIE to define a bossed sensing membrane with two reinforced areas. Thus, the influence of thin film stresses on the device performance is largely de… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3

Citation Types

0
5
0

Year Published

2009
2009
2021
2021

Publication Types

Select...
4
1
1

Relationship

2
4

Authors

Journals

citations
Cited by 10 publications
(5 citation statements)
references
References 2 publications
0
5
0
Order By: Relevance
“…Capacitive pressure sensors have advantages in their high pressure sensitivity (Lee and Wise 1982b;Clark and Wise 1979), low temperature sensitivity (Chau and Wise 1987;Sander et al 1980), and low power consumption (Chavan and Wise 2001) compared with the more established piezoresistive sensors. Nevertheless, the change in capacitance is normally non-linear with pressure (Blazquez et al 1989) unless a bossed diaphragm (Etouhami et al 2004;Martins et al 2007;Moe et al 2000;Sandmaier and Kuhl 1993) or a contact mode (touching electrodes) (Cho et al 1990) is used for linearization. Furthermore, stray capacitance (Frobenius et al 1973) and complicated signal processing circuitry are two major disadvantages of the capacitive sensors (Gopel et al 1994).…”
Section: Introductionmentioning
confidence: 99%
“…Capacitive pressure sensors have advantages in their high pressure sensitivity (Lee and Wise 1982b;Clark and Wise 1979), low temperature sensitivity (Chau and Wise 1987;Sander et al 1980), and low power consumption (Chavan and Wise 2001) compared with the more established piezoresistive sensors. Nevertheless, the change in capacitance is normally non-linear with pressure (Blazquez et al 1989) unless a bossed diaphragm (Etouhami et al 2004;Martins et al 2007;Moe et al 2000;Sandmaier and Kuhl 1993) or a contact mode (touching electrodes) (Cho et al 1990) is used for linearization. Furthermore, stray capacitance (Frobenius et al 1973) and complicated signal processing circuitry are two major disadvantages of the capacitive sensors (Gopel et al 1994).…”
Section: Introductionmentioning
confidence: 99%
“…This type of wafer substrate is very expensive, involving costly reactive ion etching process development. 16 A piezoelectricbased ultrasonic transducer was developed using 25-µmthick polyimide membrane on silicon substrate. 17 Design and numerical analysis of a capacitive type microphone was studied.…”
Section: Introductionmentioning
confidence: 99%
“…However, with the downscaling, accurate measurement of mechanical properties becomes a hot challenge especially since these properties may depend on the fabrication process. This may have consequences on MEMS performances and reliability [1][2][3]. Furthermore, architectures are more and more complex such as multilayers which make the determination of mechanical properties more difficult for each constituent material.…”
Section: Introductionmentioning
confidence: 99%