Design of an On-chip System for the SET Pulse Width Measurement

Andjelković, Marko; Petrović, Vladimir; Nenadovic, Miljana; Breitenreiter, Anselm; Krstic, Milose; Kraemer, Rolf

doi:10.1109/dsd.2017.70

Cited by 3 publications

(1 citation statement)

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“…The generation of soft errors caused by radiation-induced single-event transients (SET) is a significant reliability challenge in modern complementary metal-oxide-semiconductor (CMOS) logic, both in space applications and in terrestrial applications [1][2][3]. As process feature sizes continue to shrink, clock frequencies continue to increase, node capacitance and supply voltage decrease, the critical charge of transient pulses is reduced [3][4][5], and waveforms are more easily captured and soft errors are formed. It has been reported that SET are the main cause of soft errors in space applications [6,7], and charge sharing may even affect multiple nodes and cause single-event multiple transients (SEMT) [8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Investigation of Heavy-Ion Induced Single-Event Transient in 28 nm Bulk Inverter Chain

Liang

Chi

et al. 2020

Symmetry

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The reliability of integrated circuits under advanced process nodes is facing more severe challenges. Single-event transients (SET) are an important cause of soft errors in space applications. The SET caused by heavy ions in the 28 nm bulk silicon inverter chains was studied. A test chip with good symmetry layout design was fabricated based on the 28 nm process, and the chip was struck by using 5 kinds of heavy ions with different linear energy transfer (LET) values on heavy-ion accelerator. The research results show that in advanced technology, smaller sensitive volume makes SET cross-section measured at 28 nm smaller than 65 nm by an order of magnitude, the lower critical charge required to generate SET will increase the reliability threat of low-energy ions to the circuit, and high-energy ions are more likely to cause single-event multiple transient (SEMT), which cannot be ignored in practical circuits. The transients pulse width data can be used as a reference for SET modeling in complex circuits.

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