Design of an Integrated Self-Switching Mode Device for Power Converters

Capy, Florence; Bourennane, Abdelhakim; Breil, M.; Richardeau, Frédéric; Imbernon, E.; Sanchez, Jean-Louis; Laur, J.-P.; Austin, Patrick

doi:10.1109/mixdes.2007.4286228

Cited by 4 publications

(2 citation statements)

References 3 publications

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“…A monolithical structure based on a MOS-thyristor was previously proposed [3]. In order to avoid a drawback related to the turn-off phase, we investigated another solution ( fig.2) based on an Insulated Gate Bipolar Transistor with sense emitter cells (sense IGBT), which has already been developed in LAAS [4].…”

Section: Architecturementioning

confidence: 99%

New self-controlled and self-protected IGBT based integrated switch

Capy

Laur

Breil

et al. 2009

2009 21st International Symposium on Power Semiconductor Devices &Amp; IC's

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In this paper, we present the realization of a new self-controlled integrated power switch dedicated to selfswitching mode power converters. To achieve this function, an original topology based on an IGBT is proposed. Its operating modes are analyzed using 2D physical simulation. To realize this new power switch, a technological process compatible with the IGBT process and with 3D capacitors realization is proposed.

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Section: Architecturementioning

confidence: 99%

New self-controlled and self-protected IGBT based integrated switch

Capy

Laur

Breil

et al. 2009

2009 21st International Symposium on Power Semiconductor Devices &Amp; IC's

Self Cite

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“…Architecture: A monolithic structure based on a MOS-thyristor has been previously proposed [3]. This structure has a compact topology easy to integrate.…”

Section: Fig 1 I(v) Characteristic Of Self-switched Devicementioning

confidence: 99%

Self-switching circuit based on IGBT suited for monolithic integration

Capy¹,

Laur²,

Breil³

et al. 2009

Electron. Lett.

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A new self-controlled and self-protected integrated power switch dedicated to self-switching mode power converters is presented. To achieve this function, an original topology based on an IGBT is proposed and its operation is analysed by 2D physical simulation. The topology validates the functionality, the switching phases are instantaneous and the switch is compliant with technical specifications. These results motivate the realisation of this device, offering promising potential for a wide range of applications.

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