2021 International Conference on Electronics, Information, and Communication (ICEIC) 2021
DOI: 10.1109/iceic51217.2021.9369761
|View full text |Cite
|
Sign up to set email alerts
|

Design of All-Directional ESD Protection circuit with SCR-based I/O and LIGBT-based Power clamp

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3

Citation Types

0
1
0

Year Published

2022
2022
2023
2023

Publication Types

Select...
4
1

Relationship

2
3

Authors

Journals

citations
Cited by 5 publications
(3 citation statements)
references
References 4 publications
0
1
0
Order By: Relevance
“…In addition, ESD current discharge with higher current driving capacity is possible by forming a discharge path by positive feedback between NPN BJT and PNP BJT. Therefore it can be confirmed that ESD current is discharged through three paths to have latch-up immune characteristics through high holding voltage [15].…”
Section: Introductionmentioning
confidence: 86%
“…In addition, ESD current discharge with higher current driving capacity is possible by forming a discharge path by positive feedback between NPN BJT and PNP BJT. Therefore it can be confirmed that ESD current is discharged through three paths to have latch-up immune characteristics through high holding voltage [15].…”
Section: Introductionmentioning
confidence: 86%
“…This prevents the latch-up problem caused by the low holding voltage in conventional SCR and provides stable ESD protection. Therefore, when the proposed ESD protection circuit is built into the LDO regulator, the ESD current can be safely discharged, ensuring stable operation of the LDO regulator against ESD events, as well as improved performance and lifespan [20,21,22,23,24,25,26]. As shown in Figure 2, the proposed LDO regulator consists of a dynamic current driving structure and an SCRbased ESD protection circuit.…”
Section: Introductionmentioning
confidence: 99%
“…The LVTSCR ESD protection structure has improved electrical properties to effectively prevent ESD surge at a low voltage. The proposed LDO regulator has built in an LVTSCR-based ESD protection circuit to secure the high reliability of the IC circuit [18][19][20][21][22][23][24]. The proposed LDO regulator using the current driving buffer structure was secured reliably by applying ESD surge to POWER CLAMP and I/O CLAMP, and then the output voltage was verified.…”
Section: Introductionmentioning
confidence: 99%